| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
32,260 pcs
|
32260 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDMS3606AS is a dual N-channel asymmetrical MOSFET from ON Semiconductor, designed for DC-DC converter and power management applications. It features a logic level gate for easy drive from low-voltage controllers.
With a drain-to-source voltage rating of 30V, the control FET handles up to 13A continuous drain current, while the synchronous FET is rated at 27A. The maximum on-resistance is 8mOhm at 10V gate drive and 13A current. Input capacitance is 1695pF at 15V, and total gate charge is 29nC at 10V.
The device is housed in an 8-PowerTDFN package (Power56) and is surface mountable. Operating temperature range is -55°C to 150°C. The MOSFET is RoHS compliant and has a moisture sensitivity level of 1 (unlimited).
This MOSFET array is suitable for high-efficiency power conversion, particularly in synchronous buck converters where asymmetrical ratings optimize performance. The logic level gate threshold (max 2.7V at 250µA) enables direct interface with 3.3V or 5V logic.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.83 | $0.83 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
13A for the control FET and 27A for the synchronous FET.
8mOhm maximum at 13A and 10V gate drive.
-55°C to 150°C.
8-PowerTDFN (Power56) surface mount package.
RoHS3 compliant, but unverified.
Maximum 2.7V at 250µA drain current.