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STS4C3F60L The STMicroelectronics STS4C3F60L is an N-channel Power MOSFET with a 60V drain-source voltage rating. It offers a continuous drain current of 4A and a low on-resistance of 55mOhm.
Mfr Part #:

STS4C3F60L

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STS4C3F60L is an N-channel Power MOSFET with a 60V drain-source voltage rating. It offers a continuous drain current of 4A and a low on-resistance of 55mOhm.
✓ Total Stock: 25,868 pcs
$ Price Range: $1.64

STS4C3F60L Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
25,868 pcs
On Request
25868 pcs On Request 1 On Request On Request 15+ On Request On Request
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STS4C3F60L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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STS4C3F60L Description

Short technical summary and product information.

The STMicroelectronics STS4C3F60L is a high-performance N-channel Power MOSFET designed for switching applications. It features a 60V drain-source voltage (Vdss) and a continuous drain current capability of 4A at 25°C, with a pulsed drain current up to 16A.

 

This MOSFET boasts a low static drain-source on-resistance (Rds(on)) of 55mOhm at 2A and 10V Vgs, ensuring efficient power transfer. The gate threshold voltage is typically 1V, and it operates with a logic-level gate drive, making it suitable for a wide range of control circuits.

 

The STS4C3F60L is housed in a standard 8-SOIC package, designed for easy automated surface mount assembly. It has a total power dissipation of 2W at 25°C and an operating junction temperature range of -55°C to 150°C.

 

This complementary pair MOSFET utilizes STMicroelectronics' unique "Single Feature Size™" strip-based process, offering high packing density and manufacturing reproducibility. It is well-suited for various switching applications requiring reliable performance and low on-resistance.

STS4C3F60L Quick Information

Product Type: Power MOSFET
Canonical Name: STS4C3F60L N-channel 60V Power MOSFET
Subcategory: N-channel and P-channel

STS4C3F60L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STS4C3F60L Estimated Pricing

Qty Low High
1+ $1.64 $1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

STS4C3F60L Features

  • N-channel 60V Power MOSFET.
  • 4A continuous drain current.
  • Low 55mOhm Rds(on) at 2A.
  • Logic level gate drive.
  • Standard 8-SOIC package.

STS4C3F60L Applications

  • Suitable for switching applications.
  • Ideal for power management circuits.
  • Used in low-voltage DC-DC converters.
  • Applicable in battery-powered devices.

STS4C3F60L FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the STS4C3F60L?

The minimum drain-source breakdown voltage is 60V.

What is the maximum continuous drain current for the STS4C3F60L?

The maximum continuous drain current is 4A for the N-channel and 3A for the P-channel at TC = 25°C.

What is the on-resistance of the STS4C3F60L?

The maximum static drain-source on-resistance is 55mOhm at VGS = 10V and ID = 2A.

What is the operating junction temperature range for the STS4C3F60L?

The maximum operating junction temperature is 150°C.

What package is the STS4C3F60L available in?

The STS4C3F60L is available in an 8-SOIC surface mount package.

Is the STS4C3F60L a logic level MOSFET?

Yes, the STS4C3F60L features a logic level gate with a minimum gate threshold voltage of 1V.

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