NTMD6N03R2G The NTMD6N03R2G is a dual N-channel MOSFET from On Semiconductor. It offers 30V drain-to-source voltage and 6A continuous drain current.
Mfr Part #:

NTMD6N03R2G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NTMD6N03R2G is a dual N-channel MOSFET from On Semiconductor. It offers 30V drain-to-source voltage and 6A continuous drain current.
✓ Total Stock: 16,260 pcs
$ Price Range: $0.99

NTMD6N03R2G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
15,000 pcs
15000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,260 pcs
1260 pcs On Request 1 On Request On Request 10+ On Request On Request

NTMD6N03R2G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

NTMD6N03R2G Description

Short technical summary and product information.

The NTMD6N03R2G is a dual N-channel MOSFET designed for high-speed switching applications. It features an ultra-low on-resistance, providing higher efficiency and extending battery life. The device operates at a 30V drain-to-source voltage and can handle a continuous drain current of 6A.

 

Key electrical characteristics include a maximum Rds(on) of 32mOhm at 6A and 10V Vgs, and a typical Rds(on) of 24mOhm at 6A and 10V Vgs. The input capacitance is 950pF at 24V, and the gate charge is 30nC at 10V Vgs. The gate threshold voltage is a maximum of 2.5V at 250µA Id.

 

This MOSFET is housed in a miniature SOIC-8 surface mount package, saving board space. The operating temperature range is -55°C to 150°C. The device is Pb-free and RoHS compliant. It is suitable for applications such as DC-DC converters, computers, printers, cellular phones, and disk drives.

NTMD6N03R2G Quick Information

Product Type: MOSFET
Canonical Name: Dual N-Channel MOSFET
Subcategory: N-Channel

NTMD6N03R2G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NTMD6N03R2G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMD6N03R2G Features

  • Dual N-Channel MOSFET configuration.
  • 30V drain-to-source voltage rating.
  • 6A continuous drain current capability.
  • Low on-resistance for efficiency.
  • Miniature SOIC-8 surface mount package.

NTMD6N03R2G Applications

  • Suitable for DC-DC converters.
  • Used in computer systems.
  • Applicable to printer designs.
  • Found in cellular phones.
  • Used in disk drives.

NTMD6N03R2G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTMD6N03R2G?

The maximum drain-to-source voltage (Vdss) is 30V.

What is the continuous drain current of the NTMD6N03R2G?

The continuous drain current (Id) is 6A.

What is the typical on-resistance (Rds On) for the NTMD6N03R2G?

The typical on-resistance is 24 mOhm at 6A and 10V Vgs.

What is the operating temperature range of the NTMD6N03R2G?

The operating and storage temperature range is -55°C to 150°C.

What package type is the NTMD6N03R2G available in?

The NTMD6N03R2G is available in an 8-SOIC package for surface mounting.

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