BSD223P

The BSD223P is a dual P-Channel enhancement mode MOSFET from Infineon Technologies, part of the OptiMOS-P small signal transistor family. It features a drain-source breakdown voltage of 20V minimum and a continuous drain current of 0.39A at 25°C (0.31A at 70°C). The device offers a low on-resistance of typically 0.7Ω (maximum 1.2Ω) at VGS=-4.5V, and 1.27Ω typical (2.1Ω maximum) at VGS=-2.5V, making it suitable for logic-level gate drive applications. The gate threshold voltage is typically 0.9V with a maximum of 1.2V. The MOSFET is avalanche rated with a single pulse avalanche energy of 1.4mJ and is dv/dt rated at 6kV/µs. It is qualified to AEC Q101 and halogen-free according to IEC61249-2-21. The operating temperature range is -55°C to 150°C. The device is surface mounted in a 6-VSSOP, SC-88, SOT-363 package (supplier device package PG-SOT363-PO) and is available in tape and reel packaging (3000pcs/reel for H6327 variant). Electrical characteristics include low gate charge (0.62nC maximum), low input capacitance (56pF maximum), and fast switching speeds with typical turn-on/off delays of 3.8ns and 5.1ns respectively. This dual MOSFET is ideal for load switching, power management, and signal switching in space-constrained applications.