What are Transistors - FETs, MOSFETs - Single ?
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Compare stocked parts across manufacturers and distributors, then add lines to your RFQ.
| Part & Mfr | Total Stock | Pricing & RFQ | Current | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Operating Temperature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Technology | Vgs (Max) | Vgs(th) (Max) @ Id | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
On Semiconductor
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2,045
|
Price on request
2,045
|
8A (Ta) | 60 V | 4.5V, 10V | - | N-Channel | 25 nC @ 10 V | 850 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 3.1W (Ta), 19W (Tc) | 24mOhm @ 7.5A, 10V | 8-WDFN (3.3x3.3) | MOSFET (Metal Oxide) | ±20V | 3V @ 250µA | |
Microchip Technology
|
2,045
|
Price on request
2,045
|
360mA (Tj) | 250 V | 0V | Depletion Mode | N-Channel | - | 350 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 1.6W (Ta) | 6Ohm @ 200mA, 0V | TO-243AA (SOT-89) | MOSFET (Metal Oxide) | ±20V | - | |
Vishay
|
2,043
|
Price on request
2,043
|
30A (Tc) | 100 V | 4.5V, 10V | - | N-Channel | 29 nC @ 10 V | 802 pF @ 50 V | Surface Mount | -55°C ~ 150°C (TJ) | 3.7W (Ta), 52W (Tc) | 23.5mOhm @ 10A, 10V | PowerPAK® 1212-8 | MOSFET (Metal Oxide) | ±20V | 3V @ 250µA | |
Vishay
|
2,038
|
Price on request
2,038
|
50A (Tc) | 40 V | 4.5V, 10V | - | P-Channel | 155 nC @ 10 V | 6675 pF @ 20 V | Surface Mount | -55°C ~ 175°C (TJ) | 136W (Tc) | 9.4mOhm @ 17A, 10V | TO-252AA | MOSFET (Metal Oxide) | ±20V | 2.5V @ 250µA | |
Infineon Technologies
|
2,035
|
Price on request
2,035
|
25A (Tc) | 250 V | 10V | - | N-Channel | 29 nC @ 10 V | 2350 pF @ 100 V | Surface Mount | -55°C ~ 150°C (TJ) | 125W (Tc) | 60mOhm @ 25A, 10V | PG-TDSON-8-1 | MOSFET (Metal Oxide) | ±20V | 4V @ 90µA | |
Diodes Incorporated
|
2,033
|
Price on request
2,033
|
100mA (Ta) | 60 V | 1.5V, 4V | - | N-Channel | 0.45 nC @ 4.5 V | 32 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 470mW (Ta) | 2Ohm @ 100mA, 4V | X1-DFN1006-3 | MOSFET (Metal Oxide) | ±20V | 1V @ 250µA | |
Vishay
|
2,032
|
Price on request
2,032
|
4.3A (Tc) | 100 V | 4V, 5V | - | N-Channel | 6.1 nC @ 5 V | 250 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 2.5W (Ta), 25W (Tc) | 540mOhm @ 2.6A, 5V | D-Pak | MOSFET (Metal Oxide) | ±10V | 2V @ 250µA | |
On Semiconductor
|
2,030
|
Price on request
2,030
|
11.2A (Ta) | 60 V | 4.5V, 10V | - | N-Channel | 30 nC @ 10 V | 1460 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 3.7W (Ta), 107W (Tc) | 12mOhm @ 10A, 10V | 5-DFN (5x6) (8-SOFL) | MOSFET (Metal Oxide) | ±20V | 2.3V @ 250µA | |
On Semiconductor
|
2,029
|
Price on request
2,029
|
75A (Tc) | 100 V | 10V | - | N-Channel | 238 nC @ 20 V | 3790 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 310W (Tc) | 14mOhm @ 75A, 10V | D²PAK (TO-263) | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Toshiba
|
2,024
|
Price on request
2,024
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17A (Tc) | 60 V | 4.5V, 10V | - | N-Channel | 23 nC @ 10 V | 2000 pF @ 30 V | Surface Mount | 150°C (TJ) | 700mW (Ta), 30W (Tc) | 11.4mOhm @ 8.5A, 10V | 8-TSON Advance (3.1x3.1) | MOSFET (Metal Oxide) | ±20V | 2.5V @ 200µA | |
Vishay
|
2,022
|
Price on request
2,022
|
12A (Tc) | 600 V | 10V | - | N-Channel | 58 nC @ 10 V | 937 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 147W (Tc) | 380mOhm @ 6A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±30V | 4V @ 250µA | |
On Semiconductor
|
2,021
|
Price on request
2,021
|
9A (Ta) | 12 V | 1.8V, 4.5V | - | P-Channel | 73 nC @ 4.5 V | 5049 pF @ 5 V | Surface Mount | -55°C ~ 150°C (TJ) | 1.3W (Ta) | 11mOhm @ 9A, 4.5V | 8-TSSOP | MOSFET (Metal Oxide) | ±8V | 1.5V @ 250µA | |
Diodes Incorporated
|
2,020
|
Price on request
2,020
|
2.1A (Ta) | 60 V | 5V, 10V | - | N-Channel | - | 350 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 3W (Ta) | 330mOhm @ 3A, 10V | SOT-223-3 | MOSFET (Metal Oxide) | ±20V | 3V @ 1mA | |
Infineon Technologies
|
2,020
|
Price on request
2,020
|
35A (Ta), 196A (Tc) | 80 V | 6V, 10V | - | N-Channel | 255 nC @ 10 V | 12000 pF @ 40 V | Through Hole | -55°C ~ 175°C (TJ) | 3.8W (Ta), 300W (Tc) | 1.6mOhm @ 100A, 10V | PG-TO220-3 | MOSFET (Metal Oxide) | ±20V | 3.8V @ 267µA | |
Infineon Technologies
|
2,020
|
Price on request
2,020
|
51A (Tc) | 150 V | 10V | - | N-Channel | 89 nC @ 10 V | 2770 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 3.8W (Ta), 230W (Tc) | 32mOhm @ 36A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
STMicroelectronics
|
2,020
|
Price on request
2,020
|
38A (Tc) | 60 V | 10V | - | N-Channel | 58 nC @ 10 V | 980 pF @ 25 V | Through Hole | 175°C (TJ) | 80W (Tc) | 28mOhm @ 19A, 10V | TO-220 | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Infineon Technologies
|
2,020
|
Price on request
2,020
|
27A (Ta), 184A (Tc) | 100 V | 6V, 10V | - | N-Channel | 154 nC @ 10 V | 7300 pF @ 50 V | Through Hole | -55°C ~ 175°C (TJ) | 3.8W (Ta), 250W (Tc) | 2.6mOhm @ 100A, 10V | PG-TO220-3 | MOSFET (Metal Oxide) | ±20V | 3.8V @ 169µA | |
Infineon Technologies
|
2,020
|
Price on request
2,020
|
38A (Tc) | 300 V | 10V | - | N-Channel | 125 nC @ 10 V | 5168 pF @ 50 V | Through Hole | -55°C ~ 175°C (TJ) | 341W (Tc) | 69mOhm @ 24A, 10V | TO-220 | MOSFET (Metal Oxide) | ±20V | 5V @ 250µA | |
On Semiconductor
|
2,020
|
Price on request
2,020
|
18A (Tc) | 500 V | 10V | - | N-Channel | 60 nC @ 10 V | 2860 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 38.5W (Tc) | 265mOhm @ 9A, 10V | TO-220F-3 | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
On Semiconductor
|
2,020
|
Price on request
2,020
|
222A (Tc) | 100 V | 10V | - | N-Channel | 152 nC @ 10 V | 11180 pF @ 50 V | Through Hole | -55°C ~ 175°C (TJ) | 45W (Tc) | 2.3mOhm @ 100A, 10V | TO-220F | MOSFET (Metal Oxide) | ±20V | 4V @ 700µA | |
Infineon Technologies
|
2,020
|
Price on request
2,020
|
33A (Tc) | 650 V | 10V | - | N-Channel | 64 nC @ 10 V | 3020 pF @ 400 V | Through Hole | -55°C ~ 150°C (TJ) | 171W (Tc) | 65mOhm @ 17.1A, 10V | PG-TO220-3 | MOSFET (Metal Oxide) | ±20V | 4V @ 850µA | |
Infineon Technologies
|
2,020
|
Price on request
2,020
|
43A (Tc) | 150 V | 8V, 10V | - | N-Channel | 93 nC @ 10 V | 7280 pF @ 75 V | Through Hole | -55°C ~ 175°C (TJ) | 39W (Tc) | 7.5mOhm @ 43A, 10V | PG-TO220-FP | MOSFET (Metal Oxide) | ±20V | 4V @ 270µA | |
Infineon Technologies
|
2,020
|
Price on request
2,020
|
120A (Tc) | 100 V | 10V | - | N-Channel | 170 nC @ 10 V | 6860 pF @ 50 V | Through Hole | -55°C ~ 175°C (TJ) | 250W (Tc) | 6mOhm @ 75A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 4V @ 150µA | |
On Semiconductor
|
2,020
|
Price on request
2,020
|
52A (Tc) | 200 V | 10V | - | N-Channel | 63 nC @ 10 V | 2900 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 357W (Tc) | 49mOhm @ 26A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
Nexperia USA Inc.
|
2,020
|
Price on request
2,020
|
1.5A (Ta) | 100 V | 4.5V, 10V | - | N-Channel | 6.8 nC @ 10 V | 195 pF @ 50 V | Surface Mount | -55°C ~ 150°C (TJ) | 770mW (Ta) | 385mOhm @ 1.5A, 10V | SOT-223 | MOSFET (Metal Oxide) | ±20V | 2.7V @ 250µA | |
Vishay
|
2,020
|
Price on request
2,020
|
73A (Tc) | 600 V | 10V | - | N-Channel | 362 nC @ 10 V | 7700 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 520W (Tc) | 39mOhm @ 36A, 10V | TO-247AC | MOSFET (Metal Oxide) | ±30V | 4V @ 250µA | |
Infineon Technologies
|
2,020
|
Price on request
2,020
|
350mA (Ta) | 240 V | 0V, 10V | Depletion Mode | N-Channel | 5.7 nC @ 5 V | 108 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 1.8W (Ta) | 6Ohm @ 350mA, 10V | PG-SOT223-4 | MOSFET (Metal Oxide) | ±20V | 1V @ 108µA | |
Infineon Technologies
|
2,020
|
Price on request
2,020
|
35A (Tc) | 150 V | 10V | - | N-Channel | 40 nC @ 10 V | 1750 pF @ 50 V | Through Hole | -55°C ~ 175°C (TJ) | 144W (Tc) | 39mOhm @ 21A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 5V @ 100µA | |
Infineon Technologies
|
2,020
|
Price on request
2,020
|
50A (Tc) | 100 V | 4.5V, 10V | - | N-Channel | 64 nC @ 10 V | 4180 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 100W (Tc) | 15.4mOhm @ 50A, 10V | PG-TO263-3-2 | MOSFET (Metal Oxide) | ±20V | 2.4V @ 60µA | |
Infineon Technologies
|
2,020
|
Price on request
2,020
|
15A (Tc) | 100 V | 4.5V, 10V | - | P-Channel | 62 nC @ 10 V | 1490 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 128W (Tc) | 200mOhm @ 11.3A, 10V | PG-TO220-3 | MOSFET (Metal Oxide) | ±20V | 2V @ 1.54mA | |
STMicroelectronics
|
2,020
|
Price on request
2,020
|
34A (Tc) | 600 V | 10V | - | N-Channel | 55 nC @ 10 V | 2370 pF @ 100 V | Through Hole | 150°C (TJ) | 40W (Tc) | 87mOhm @ 17A, 10V | TO-220FP | MOSFET (Metal Oxide) | ±25V | 4.75V @ 250µA | |
On Semiconductor
|
2,020
|
Price on request
2,020
|
120A (Tc) | 100 V | 10V | - | N-Channel | 74 nC @ 10 V | 5270 pF @ 50 V | Through Hole | -55°C ~ 175°C (TJ) | 263W (Tc) | 4.5mOhm @ 100A, 10V | I2PAK (TO-262) | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Infineon Technologies
|
2,020
|
Price on request
2,020
|
120A (Tc) | 40 V | 4.5V, 10V | - | P-Channel | 234 nC @ 10 V | 15000 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 136W (Tc) | 3.4mOhm @ 100A, 10V | PG-TO263-3-2 | MOSFET (Metal Oxide) | +5V, -16V | 2.2V @ 340µA | |
On Semiconductor
|
2,020
|
Price on request
2,020
|
1.5A (Tc) | 800 V | 10V | - | N-Channel | 15 nC @ 10 V | 550 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 35W (Tc) | 6.3Ohm @ 750mA, 10V | TO-220F-3 | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
Infineon Technologies
|
2,020
|
Price on request
2,020
|
180A (Tc) | 100 V | 4.5V, 10V | - | N-Channel | 130 nC @ 4.5 V | 11360 pF @ 50 V | Through Hole | -55°C ~ 175°C (TJ) | 370W (Tc) | 4.3mOhm @ 110A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±16V | 2.5V @ 250µA | |
Vishay
|
2,020
|
Price on request
2,020
|
8A (Tc) | 800 V | 10V | - | N-Channel | 42 nC @ 10 V | 804 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 78W (Tc) | 450mOhm @ 5.5A, 10V | TO-247AC | MOSFET (Metal Oxide) | ±30V | 4V @ 250µA | |
Infineon Technologies
|
2,020
|
Price on request
2,020
|
180A (Tc) | 120 V | 10V | - | N-Channel | 211 nC @ 10 V | 13800 pF @ 60 V | Surface Mount | -55°C ~ 175°C (TJ) | 300W (Tc) | 3.6mOhm @ 100A, 10V | PG-TO263-7 | MOSFET (Metal Oxide) | ±20V | 4V @ 270µA | |
Infineon Technologies
|
2,020
|
Price on request
2,020
|
56A (Tc) | 1200 V | - | Standard | N-Channel | 63 nC @ 18 V | 2290 pF @ 800 V | Surface Mount | -55°C ~ 175°C (TJ) | 300W (Tc) | 41mOhm @ 25A, 18V | PG-TO263-7-12 | SiCFET (Silicon Carbide) | +18V, -15V | 5.7V @ 11.5mA | |
Vishay
|
2,020
|
Price on request
2,020
|
29A (Tc) | 600 V | 10V | - | N-Channel | 53 nC @ 10 V | 1804 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 208W (Tc) | 102mOhm @ 13A, 10V | TO-247AC | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
Vishay
|
2,020
|
Price on request
2,020
|
41A (Tc) | 600 V | 10V | - | N-Channel | 77 nC @ 10 V | 2628 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 250W (Tc) | 68mOhm @ 16A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
Infineon Technologies
|
2,020
|
Price on request
2,020
|
160A (Tc) | 100 V | 6V, 10V | - | N-Channel | 117 nC @ 10 V | 8410 pF @ 50 V | Surface Mount | -55°C ~ 175°C (TJ) | 214W (Tc) | 3.9mOhm @ 100A, 10V | PG-TO263-7 | MOSFET (Metal Oxide) | ±20V | 3.5V @ 160µA | |
Infineon Technologies
|
2,020
|
Price on request
2,020
|
95A (Tc) | 60 V | 6V, 10V | - | N-Channel | 110 nC @ 10 V | 4010 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 125W (Tc) | 5.9mOhm @ 57A, 10V | TO-220 | MOSFET (Metal Oxide) | ±20V | 3.7V @ 100µA | |
Infineon Technologies
|
2,020
|
Price on request
2,020
|
180A (Tc) | 80 V | 6V, 10V | - | N-Channel | 206 nC @ 10 V | 14200 pF @ 40 V | Surface Mount | -55°C ~ 175°C (TJ) | 300W (Tc) | 1.9mOhm @ 100A, 10V | PG-TO263-7 | MOSFET (Metal Oxide) | ±20V | 3.5V @ 270µA | |
Infineon Technologies
|
2,020
|
Price on request
2,020
|
31A (Tc) | 650 V | 10V | - | N-Channel | 80 nC @ 10 V | 2800 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 255W (Tc) | 99mOhm @ 18A, 10V | PG-TO220-3 | MOSFET (Metal Oxide) | ±20V | 3.5V @ 1.2mA | |
Infineon Technologies
|
2,020
|
Price on request
2,020
|
120A (Tc) | 80 V | 6V, 10V | - | N-Channel | 123 nC @ 10 V | 8970 pF @ 40 V | Surface Mount | -55°C ~ 175°C (TJ) | 214W (Tc) | 2.4mOhm @ 100A, 10V | PG-TO263-3 | MOSFET (Metal Oxide) | ±20V | 3.8V @ 154µA | |
STMicroelectronics
|
2,020
|
Price on request
2,020
|
69A (Tc) | 650 V | 10V | - | N-Channel | 203 nC @ 10 V | 9000 pF @ 100 V | Through Hole | 150°C (TJ) | 450W (Tc) | 32mOhm @ 34.5A, 10V | TO-247-3 | MOSFET (Metal Oxide) | ±25V | 5V @ 250µA | |
On Semiconductor
|
2,010
|
Price on request
2,010
|
55A (Tc) | 250 V | 10V | - | N-Channel | 180 nC @ 10 V | 6250 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 310W (Tc) | 40mOhm @ 27.5A, 10V | TO-3PN | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
Vishay
|
2,010
|
Price on request
2,010
|
85A (Tc) | 100 V | 4.5V, 10V | - | N-Channel | 160 nC @ 10 V | 6550 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 3.75W (Ta), 250W (Tc) | 10.5mOhm @ 30A, 10V | - | MOSFET (Metal Oxide) | ±20V | 3V @ 250µA | |
Infineon Technologies
|
2,007
|
Price on request
2,007
|
42A (Tc) | 100 V | 10V | - | N-Channel | 110 nC @ 10 V | 1900 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 3.8W (Ta), 160W (Tc) | 36mOhm @ 22A, 10V | D2PAK | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
STMicroelectronics
|
2,006
|
Price on request
2,006
|
50A (Tc) | 600 V | 10V | - | N-Channel | 90 nC @ 10 V | 4100 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 360W (Tc) | 60mOhm @ 25A, 10V | TO-247-3 | MOSFET (Metal Oxide) | ±25V | 5V @ 250µA |