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BBS3002-TL-1E P-Channel MOSFET rated at 60V drain-source voltage and 100A continuous drain current. Features low on-resistance of 5.8 mOhm at 10V gate drive.
Mfr Part #:

BBS3002-TL-1E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel MOSFET rated at 60V drain-source voltage and 100A continuous drain current. Features low on-resistance of 5.8 mOhm at 10V gate drive.
Total Stock: 3,539 pcs
$ Price Range: $2.36

BBS3002-TL-1E Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,539 pcs
3539 pcs On Request 1 On Request On Request On Request On Request On Request

BBS3002-TL-1E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)

BBS3002-TL-1E Description

Short technical summary and product information.

The BBS3002-TL-1E is a P-Channel enhancement-mode MOSFET from On Semiconductor. It offers a drain-source voltage rating of 60V and a continuous drain current of 100A (at Ta). The device delivers a low typical on-resistance of 5.8 mOhm at Vgs=10V and Id=50A, enabling efficient power handling.

 

With a maximum gate charge of 280 nC at 10V and input capacitance of 13200 pF at Vds=20V, this MOSFET is suitable for moderate-speed switching applications such as power management and DC-DC converters. The maximum gate-source voltage is ±20V.

 

The MOSFET is housed in a surface-mount D2PAK (TO-263) package, which supports a maximum power dissipation of 90W at case temperature. The operating junction temperature range is -55°C to 150°C. According to available data, the device is reported as RoHS3 compliant, MSL 1, and REACH unaffected (status unverified).

BBS3002-TL-1E Quick Information

Product Type: Power MOSFET - P-Channel
Canonical Name: BBS3002-TL-1E P-Channel MOSFET
Subcategory: Single P-Channel MOSFET

BBS3002-TL-1E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BBS3002-TL-1E Estimated Pricing

Qty Low High
1+ $2.36 $2.36

Estimated market price range - modelled values for guidance only, not live distributor offers.

BBS3002-TL-1E Features

  • P-Channel MOSFET with 60V drain-source voltage.
  • Continuous drain current of 100A.
  • Low on-resistance of 5.8 mOhm typical.
  • Surface mount D2PAK (TO-263) package.
  • Operating temperature range -55°C to 150°C.

BBS3002-TL-1E Applications

  • Suitable for power management circuits.
  • Used in DC-DC converter applications.
  • Ideal for load switching and battery protection.

BBS3002-TL-1E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

The drain-source voltage (Vdss) is 60V.

What package is this MOSFET available in?

The MOSFET is available in TO-263-3, D²Pak (2 Leads + Tab), TO-263AB (supplier device package D²PAK).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is this product RoHS compliant?

According to available data, it is reported as RoHS3 compliant (status unverified).

What is the maximum drain current?

The continuous drain current is 100A (at Ta).

What is the on-resistance?

The maximum on-resistance is 5.8 mOhm at 50A and Vgs=10V.

What are the recommended gate drive voltages?

The recommended gate drive voltages are 4V and 10V.

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