| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,566 pcs
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3566 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQPF44N10 is an N-Channel enhancement mode power MOSFET fabricated with Fairchild's proprietary planar stripe DMOS technology. This device is designed to minimize on-state resistance and deliver superior switching performance.
Key electrical ratings include a drain-source voltage of 100V, continuous drain current of 27A at 25°C case temperature (19.1A at 100°C), and pulsed drain current up to 108A. The on-resistance is typically 30 mΩ and maximum 39 mΩ at VGS=10V and ID=13.5A. Gate charge is typically 48 nC (62 nC max) at 10V, and input capacitance is 1800 pF at VDS=25V.
The device is offered in a TO-220F full pack through-hole package (supplier package: TO-220F-3) with a junction-to-case thermal resistance of 2.73°C/W and junction-to-ambient of 62.5°C/W. It supports an operating junction temperature range of -55°C to 175°C.
This MOSFET is well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control. It is 100% avalanche tested and features fast switching and improved dv/dt capability.
The maximum drain-source voltage (VDS) is 100V.
It is housed in a TO-220-3 Full Pack through-hole package, also known as TO-220F-3.
The operating junction temperature range is -55°C to 175°C.
The part is listed as RoHS3 Compliant, but this is unverified low-confidence data.
Typical gate charge (Qg) is 48 nC, with a maximum of 62 nC at VGS=10V.
Typical on-resistance is 30 mΩ, maximum 39 mΩ at ID=13.5A and VGS=10V.
27A at Tc=25°C and 19.1A at Tc=100°C.