| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,566 pcs
|
3566 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs(th) (Max) @ Id |
This P-Channel enhancement mode power field effect transistor is produced using Fairchild's proprietary high cell density DMOS technology. It is designed to minimize on-state resistance, provide rugged performance, and fast switching. The device can be used in applications requiring up to 0.17A DC and pulsed currents up to 0.68A. It is particularly suited for low voltage high side switch applications. The BSS110 is offered in the TO-92-3 through-hole package, providing easy integration into circuit boards. Key electrical characteristics include a maximum drain-source voltage of -50V, a typical gate threshold voltage of -1.75V, and a low input capacitance of 37pF. The device operates over a junction temperature range of -55°C to 150°C and has a thermal resistance of 200°C/W.
| Qty | Low | High |
|---|---|---|
| 2,000+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-50V maximum.
0.17A at 25°C.
TO-92-3 (through-hole).
-55°C to 150°C.
RoHS3 compliant (unverified).
2.2Ω at 170mA, 10V gate drive.
Minimum -0.8V, typical -1.75V, maximum -2V at 1mA.