| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,566 pcs
|
3566 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies SPU09P06PL is a P-Channel MOSFET designed for power switching applications. It offers a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 9.7A at 25°C case temperature.
Key electrical characteristics include a low on-state resistance (Rds(on)) of up to 0.25 Ohms at 6.8A and 10V Vgs, and a gate threshold voltage (Vgs(th)) of up to 2V at 250µA. The device supports logic-level gate drive with a Vgs(th) of -1V to -2V.
Dynamic characteristics include input capacitance (Ciss) of up to 450pF and gate charge (Qg) of up to 21nC. The operating temperature range is -55°C to 175°C, with a maximum power dissipation of 42W at 25°C.
This MOSFET is packaged in a TO-251-3 Short Leads, IPak, TO-251AA package, suitable for through-hole mounting. It is rated for 175°C operation and is RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is -60V.
The continuous drain current is -9.7A at 25°C case temperature and -6.8A at 100°C.
The maximum on-state resistance is 0.25 Ohm at VGS=-10V and 0.4 Ohm at VGS=-4.5V.
It comes in a TO-251-3 (IPak, TO-251AA) through-hole package.
The operating junction temperature range is -55°C to 175°C.
The gate threshold voltage is typically -1.5V, with a range of -1V to -2V at VGS=VDS and ID=-250µA.