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FDP8D5N10C N-Channel MOSFET with 100V drain-source voltage and 76A continuous drain current in TO-220-3 package.
Mfr Part #:

FDP8D5N10C

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 100V drain-source voltage and 76A continuous drain current in TO-220-3 package.
✓ Total Stock: 3,567 pcs
$ Price Range: $1.33 - $2.62

FDP8D5N10C Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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Flip Electronics ✓
Non-Authorised Inventory information
3,567 pcs
On Request
3567 pcs On Request 1 On Request On Request On Request On Request On Request
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FDP8D5N10C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDP8D5N10C Description

Short technical summary and product information.

The FDP8D5N10C is an N-Channel MOSFET manufactured using onsemi's advanced POWERTRENCH process with Shielded Gate technology. This design minimizes on-state resistance while maintaining superior switching performance with a best-in-class soft body diode.

 

Key electrical specifications include a maximum drain-source voltage of 100V, continuous drain current of 76A at Tc=25°C (54A at Tc=100°C), and a low on-resistance of 8.5mΩ at Vgs=10V, Id=76A. The device features a gate charge of 34nC at Vgs=10V and input capacitance of 2475pF at Vds=50V, enabling efficient high-frequency switching. It is 100% avalanche tested with a single pulsed avalanche energy rating of 181mJ.

 

Packaged in a TO-220-3 through-hole case, the device supports a maximum power dissipation of 107W at Tc=25°C and operates over a junction temperature range of -55°C to 175°C. It is RoHS compliant and suitable for applications such as synchronous rectification in ATX/server/telecom power supplies, motor drives, uninterruptible power supplies, and micro solar inverters.

FDP8D5N10C Quick Information

Product Type: N-Channel MOSFET
Canonical Name: N-Channel MOSFET, 100V, 76A, TO-220-3
Subcategory: Single MOSFETs

FDP8D5N10C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDP8D5N10C Estimated Pricing

Qty Low High
1+ $2.62 $2.62
10+ $1.78 $1.78
100+ $1.70 $1.70
500+ $1.41 $1.41
800+ $1.33 $1.33

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDP8D5N10C Features

  • 100V drain-source voltage rating.
  • 76A continuous drain current capability.
  • Low on-resistance of 8.5mΩ at 10V.
  • RoHS compliant and 100% UIL tested.
  • TO-220-3 through-hole package.

FDP8D5N10C Applications

  • Ideal for synchronous rectification in power supplies.
  • Used in motor drives and uninterruptible power supplies.
  • Suitable for micro solar inverter designs.

FDP8D5N10C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDP8D5N10C?

100V.

What is the continuous drain current rating?

76A at Tc=25°C, 54A at Tc=100°C.

What is the on-resistance (Rds(on))?

8.5mΩ maximum at Vgs=10V, Id=76A.

What is the operating temperature range?

-55°C to 175°C junction temperature.

Is the FDP8D5N10C RoHS compliant?

Yes, it is RoHS compliant as stated in the datasheet.

What package is the FDP8D5N10C available in?

TO-220-3 through-hole package.

What is the gate charge of this MOSFET?

34nC at Vgs=10V.

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