IPD90R1K2C3ATMA2 N-Channel Power MOSFET rated for 900V drain-source voltage and 5.1A continuous drain current. Features low on-resistance of 1.2Ω max and is packaged in a surface-mount TO-252-3 (DPak).
Mfr Part #:

IPD90R1K2C3ATMA2

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel Power MOSFET rated for 900V drain-source voltage and 5.1A continuous drain current. Features low on-resistance of 1.2Ω max and is packaged in a surface-mount TO-252-3 (DPak).
✓ Total Stock: 3,520 pcs
$ Price Range: $0.69 - $2.49

IPD90R1K2C3ATMA2 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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3,520 pcs
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IPD90R1K2C3ATMA2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD90R1K2C3ATMA2 Description

Short technical summary and product information.

The IPD90R1K2C3ATMA2 is an N-Channel Power MOSFET from Infineon's CoolMOS 900V family. It features a drain-source breakdown voltage of 900V and a continuous drain current of 5.1A at case temperature 25°C. The device has a maximum on-resistance of 1.2Ω at 10V gate drive, with a typical gate charge of 28 nC, enabling efficient switching in power conversion circuits.

 

This MOSFET is designed for quasi-resonant flyback and forward topologies, making it suitable for PC silverbox, consumer power supplies, and industrial SMPS. It offers high dv/dt ruggedness and single-pulse avalanche energy capability of 68 mJ. The device is fully qualified according to JEDEC for industrial applications.

 

The part is housed in a PG-TO252-3 (DPak) surface-mount package, which is Pb-free and halogen-free (AT version). The operating junction temperature range is -55°C to 150°C, with a junction-to-case thermal resistance of 1.5 K/W.

IPD90R1K2C3ATMA2 Quick Information

Product Type: N-Channel Power MOSFET
Series: CoolMOS 900V
Canonical Name: Infineon Technologies IPD90R1K2C3ATMA2 CoolMOS 900V N-Channel MOSFET
Subcategory: N-Channel Power MOSFET

IPD90R1K2C3ATMA2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-free lead plating

IPD90R1K2C3ATMA2 Estimated Pricing

Qty Low High
1+ $2.49 $2.49
10+ $1.58 $1.58
100+ $1.07 $1.07
500+ $0.86 $0.86
1,000+ $0.77 $0.77
2,500+ $0.69 $0.69

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD90R1K2C3ATMA2 Features

  • 900V drain-source breakdown voltage.
  • 5.1A continuous drain current at 25°C.
  • Low on-resistance of 1.2Ω maximum.
  • Ultra low gate charge of 28 nC typical.
  • Pb-free and halogen-free compliant.

IPD90R1K2C3ATMA2 Applications

  • Ideal for quasi-resonant flyback power supplies.
  • Used in industrial SMPS applications.
  • Suitable for PC silver box and consumer power adapters.
  • Designed for high-voltage DC-DC converters.

IPD90R1K2C3ATMA2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the IPD90R1K2C3ATMA2?

The drain-source breakdown voltage is 900V minimum at Vgs=0V, Id=250µA.

What is the package type of this MOSFET?

It is available in a TO-252-3 (DPak) surface-mount package, supplier device package PG-TO252-3.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the IPD90R1K2C3ATMA2 RoHS compliant?

Yes, it is RoHS3 compliant, Pb-free, and halogen-free (AT version).

What is the continuous drain current rating?

The continuous drain current is 5.1A at case temperature 25°C and 3.2A at 100°C.

What is the typical on-resistance?

The typical drain-source on-resistance is 0.94Ω, with a maximum of 1.2Ω at Vgs=10V, Id=2.8A.

What is the gate charge of this MOSFET?

The total gate charge is 28 nC typical at Vgs=10V.

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