| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,566 pcs
|
3566 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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The IRF7460 is an N-Channel power MOSFET from Infineon Technologies, designed for high-frequency switching applications such as isolated DC-DC converters and buck converters. It features a drain-source voltage rating of 20V and a continuous drain current of 12A at 25°C ambient temperature. The device offers a very low on-resistance of 10mOhm maximum at 10V gate drive, minimizing conduction losses.
The MOSFET is built with HEXFET technology and provides fully characterized avalanche energy and current ratings. It has a maximum power dissipation of 2.5W at 25°C and operates over a junction temperature range of -55°C to 150°C. Dynamic characteristics include typical turn-on delay of 11ns and rise time of 6.9ns, making it suitable for high-speed switching.
The IRF7460 is housed in a standard 8-SOIC surface-mount package (8-SO), which is widely used in compact power supply designs. The device is RoHS compliant and has an MSL rating of 1 (unlimited). It is commonly used in telecom and industrial power conversion systems.
| Qty | Low | High |
|---|---|---|
| 95+ | $1.65 | $1.65 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-55°C to 150°C junction temperature.
RoHS3 Compliant (unverified).
12A at 25°C ambient.
10mOhm maximum at 12A, 10V gate drive.
3V maximum at 250µA drain current.