IPD16CN10N G IPD16CN10N G is an N-Channel MOSFET from Infineon Technologies with 100V drain-source voltage, 53A continuous drain current, and 16mOhm max Rds(on). It comes in a TO-252 package.
Mfr Part #:

IPD16CN10N G

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IPD16CN10N G is an N-Channel MOSFET from Infineon Technologies with 100V drain-source voltage, 53A continuous drain current, and 16mOhm max Rds(on). It comes in a TO-252 package.
✓ Total Stock: 3,542 pcs
$ Price Range: $0.64 - $0.67

IPD16CN10N G Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,542 pcs
3542 pcs On Request 1 On Request On Request 06+ On Request On Request

IPD16CN10N G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD16CN10N G Description

Short technical summary and product information.

The IPD16CN10N G is an N-Channel power MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power switching applications. The device features a drain-to-source voltage rating of 100V and a continuous drain current of 53A at case temperature (Tc). The maximum on-state resistance is 16mOhm at 10V gate drive and 53A drain current.

 

The MOSFET utilizes standard MOSFET (Metal Oxide) technology and offers a maximum power dissipation of 100W at case temperature. The gate threshold voltage is up to 4V at 61µA drain current, and the maximum gate-to-source voltage is ±20V. The device has a gate charge of 48nC at 10V and an input capacitance of 3220pF at 50V drain-source voltage.

 

The IPD16CN10N G is housed in a TO-252-3 (DPak) surface-mount package, also known as PG-TO252-3. It is suitable for surface-mount assembly and operates over a junction temperature range of -55°C to 175°C. This makes it appropriate for a variety of industrial and consumer power applications where efficient switching and low conduction losses are required.

IPD16CN10N G Quick Information

Product Type: N-Channel MOSFET
Canonical Name: IPD16CN10N G N-Channel MOSFET
Subcategory: Single MOSFET

IPD16CN10N G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected

IPD16CN10N G Estimated Pricing

Qty Low High
2,500+ $0.67 $0.67
5,000+ $0.64 $0.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD16CN10N G Features

  • N-Channel MOSFET with 100V drain-source voltage
  • Continuous drain current of 53A at Tc
  • Low 16mOhm maximum on-state resistance
  • Surface-mount TO-252-3 package
  • Operates up to 175°C junction temperature

IPD16CN10N G Applications

  • Used in DC-DC converter circuits.
  • Suitable for power management applications.
  • Ideal for motor drive control systems.
  • Applicable in load switch designs.
  • Used in high-efficiency power switching.

IPD16CN10N G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the IPD16CN10N G?

The drain-to-source voltage rating is 100V.

What package is the IPD16CN10N G available in?

The IPD16CN10N G is available in TO-252-3 (DPak) surface-mount package.

What is the operating temperature range of the IPD16CN10N G?

The operating temperature range is -55°C to 175°C (junction temperature).

Is the IPD16CN10N G RoHS compliant?

The RoHS status is indicated as compliant (RoHS3) but is unverified.

What is the maximum continuous drain current of the IPD16CN10N G?

The maximum continuous drain current is 53A at case temperature (Tc).

What is the maximum on-state resistance of the IPD16CN10N G?

The maximum on-state resistance is 16mOhm at Vgs=10V and Id=53A.

What is the maximum power dissipation of the IPD16CN10N G?

The maximum power dissipation is 100W at case temperature (Tc).

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