FDZ206P P-Channel MOSFET, 20V Vdss, 13A continuous drain current, surface mount 30-BGA package.
Mfr Part #:

FDZ206P

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel MOSFET, 20V Vdss, 13A continuous drain current, surface mount 30-BGA package.
✓ Total Stock: 3,573 pcs

FDZ206P Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,803 pcs
2803 pcs On Request 1 On Request On Request 05+ On Request On Request
Non-Authorised Inventory information
770 pcs
770 pcs On Request 1 On Request On Request On Request On Request On Request

FDZ206P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

FDZ206P Description

Short technical summary and product information.

The FDZ206P is a P-Channel MOSFET from On Semiconductor, built with advanced PowerTrench technology. It features a maximum drain-source voltage of 20V and continuous drain current of 13A at 25°C, with pulsed current capability up to 60A. The device offers low on-resistance: 9.5mΩ typical at VGS = -4.5V and 14.5mΩ at VGS = -2.5V, enabling efficient power switching.

 

Gate threshold voltage ranges from -0.6V to -1.5V, and the device is specified for drive voltages of 2.5V and 4.5V. Input capacitance is 4280pF typical, with gate charge of 53nC at VGS = -4.5V. Switching speeds are characterized with typical turn-on delay of 17ns and turn-off delay of 115ns.

 

The MOSFET is housed in a 30-WFBGA package (30-BGA 4x3.5mm) with 0.65mm ball pitch and an ultra-thin profile under 0.8mm when mounted. It supports surface mount assembly and is supplied in tape and reel packaging with 4000 units per reel. Thermal resistance junction-to-ambient is 56°C/W, and maximum power dissipation is 2.2W at 25°C ambient.

 

Typical applications include battery management, load switching, and battery protection circuits where space efficiency and low on-resistance are critical.

FDZ206P Quick Information

Product Type: MOSFET
Series: PowerTrench
Canonical Name: FDZ206P P-Channel MOSFET
Subcategory: P-Channel MOSFET

FDZ206P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDZ206P Features

  • P-Channel PowerTrench MOSFET technology.
  • Low on-resistance of 9.5mΩ typical.
  • Ultra-thin BGA package under 0.8mm.
  • High current handling up to 13A continuous.
  • Operates from -55°C to 150°C.

FDZ206P Applications

  • Ideal for battery management systems.
  • Used in load switch applications.
  • Suitable for battery protection circuits.

FDZ206P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

20V maximum.

What is the continuous drain current?

13A at 25°C ambient, continuous.

What is the on-resistance?

9.5mΩ maximum at VGS = -4.5V, ID = -13A; 14.5mΩ maximum at VGS = -2.5V, ID = -10.5A.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package is available?

30-WFBGA (30-BGA 4x3.5mm) with 0.65mm ball pitch.

Is it RoHS compliant?

RoHS3 compliant (unverified).

What is the gate threshold voltage?

Minimum -0.6V, typical -0.9V, maximum -1.5V at VDS = VGS, ID = -250µA.

Home
Account

Categories