| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,566 pcs
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3566 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFB23N20DPBF is a 200V N-Channel enhancement-mode power MOSFET from Infineon Technologies' HEXFET family. It is designed for high-frequency switching applications, particularly DC-DC converters in telecom and industrial power systems. The device offers a low gate-to-drain charge to reduce switching losses and is fully characterized for capacitance and avalanche energy.
Key electrical specifications include a drain-to-source breakdown voltage of 200V, a maximum continuous drain current of 24A at a case temperature of 25°C (17A at 100°C), and a maximum static drain-to-source on-resistance of 100 mOhm at VGS=10V. The gate threshold voltage ranges from 3.0V to 5.5V. The device is capable of handling pulsed drain currents up to 96A and has a maximum power dissipation of 170W at 25°C case temperature.
The IRFB23N20DPBF is housed in a TO-220AB package with through-hole mounting. It is lead-free and RoHS compliant. The device is suitable for use in high-frequency DC-DC converters, particularly in 48V telecom input forward converter topologies.
The maximum drain-to-source breakdown voltage is 200V.
The continuous drain current is 24A at a case temperature of 25°C, and 17A at 100°C.
The maximum static drain-to-source on-resistance is 100 mOhm at VGS=10V and ID=14A.
The operating junction temperature range is -55°C to 175°C.
The IRFB23N20DPBF is available in a TO-220AB (TO-220-3) through-hole package.
The IRFB23N20DPBF is listed as RoHS3 compliant and is lead-free.
The gate threshold voltage ranges from 3.0V (minimum) to 5.5V (maximum) at VDS=VGS and ID=250µA.