| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,222 pcs
|
3222 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
300 pcs
|
300 pcs | On Request | 1 | On Request | On Request | 01+27 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The RFP40N10 from On Semiconductor is an N-Channel Power MOSFET manufactured using the MegaFET process. This device is rated for 100V drain-to-source breakdown voltage and can handle a continuous drain current of 40A (Tc) with a maximum power dissipation of 160W (Tc).
Key electrical specifications include an Rds On (Max) of 40mOhm at 40A and 10V, a gate-to-source voltage range of ±20V, and a threshold voltage of 4V at 250µA. The MOSFET operates within a temperature range of -55°C to 175°C.
This component is supplied in a TO-220-3 package and is designed for through-hole mounting. Its robust design makes it suitable for applications such as switching regulators, switching converters, motor drivers, relay drivers, and emitter switches for bipolar transistors. The device can be operated directly from integrated circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is 100V.
The maximum continuous drain current is 40A.
The maximum power dissipation is 160W.
The operating temperature range is -55°C to 175°C.
The RFP40N10 is supplied in a TO-220-3 package.
The Rds On (Max) is 40mOhm at 40A and 10V.