Mfr Part #:

IRFB4510PBF

N-Channel MOSFET with 100V drain-source voltage and 62A continuous drain current. Features low on-resistance of 13.5mΩ and is housed in a TO-220AB package.

✓ Total Stock: 3,550 pcs

$ Price Range: $0.99 - $2.78

IRFB4510PBF Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	2,000 pcs On Request	2000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	1,550 pcs On Request	1550 pcs	On Request	1	On Request	On Request	20+	On Request	On Request

IRFB4510PBF Description

Short technical summary and product information.

The IRFB4510PBF is a HEXFET power MOSFET from Infineon Technologies. It is an N-channel device with a maximum drain-source voltage of 100V and continuous drain current of 62A at Tc=25°C (44A at Tc=100°C). The on-resistance is typically 10.7mΩ and maximum 13.5mΩ at Vgs=10V and Id=37A.

Electrical characteristics include a gate threshold voltage range of 2.0 to 4.0V, total gate charge of 58nC typical (87nC maximum), and input capacitance of 3180pF. The device is designed for high efficiency synchronous rectification in SMPS, uninterruptible power supplies, and high speed power switching applications.

The MOSFET is offered in a TO-220-3 (TO-220AB) through-hole package. Maximum power dissipation is 140W at Tc=25°C with a linear derating factor of 0.95 W/°C. Operating junction temperature range is -55°C to 175°C. The part is lead-free and listed as RoHS3 compliant (unverified).

IRFB4510PBF Quick Information

Product Type: Power MOSFET

Canonical Name: IRFB4510PBF - N-Channel MOSFET, 100V, 62A, TO-220AB

Subcategory: N-Channel MOSFET

IRFB4510PBF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 (Unlimited)

REACH Status: REACH Unaffected

Lead Free: Lead-Free

IRFB4510PBF Estimated Pricing

Qty	Low	High
1+	$2.78	$2.78
10+	$1.79	$1.79
50+	$1.36	$1.36
100+	$1.23	$1.23
500+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFB4510PBF Features

100V drain-source breakdown voltage.
62A continuous drain current at 25°C.
Low on-resistance of 13.5mΩ maximum.
TO-220AB through-hole package.
HEXFET power MOSFET technology.

IRFB4510PBF Applications

High efficiency synchronous rectification in SMPS.
Uninterruptible power supply circuits.
High speed power switching applications.
Hard switched and high frequency circuits.

IRFB4510PBF FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating?

100V maximum.

What package is the IRFB4510PBF available in?

TO-220-3 (TO-220AB) through-hole package.

What is the operating temperature range?

-55°C to 175°C junction temperature.

Is the IRFB4510PBF RoHS compliant?

RoHS3 compliant per existing data, but unverified.

What is the continuous drain current rating?

62A at Tc=25°C, 44A at Tc=100°C.

What is the on-resistance?

Typical 10.7mΩ, maximum 13.5mΩ at Vgs=10V, Id=37A.

What is the total gate charge?

Typical 58nC, maximum 87nC at Vgs=10V.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	62 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	58 - 87 nC
Input Capacitance (Ciss) (Max) @ Vds	3180 pF
Lead Style	Through Hole
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C
Power Dissipation (Max)	140 W
Rds On (Max) @ Id, Vgs	10.7 - 13.5 mΩ
Supplier Device Package	TO-220AB
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Termination Style	Through Hole
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	2.0 - 4.0 V