| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,566 pcs
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3566 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MTB10N40E from On Semiconductor is an N-Channel Power MOSFET. This device is designed for surface mount applications using the D2PAK package.
Key electrical specifications include a maximum Drain-Source Voltage of 400V and a continuous Drain Current of 10A at 25°C. The ON-State Resistance is a maximum of 0.12 Ohms when VGS is 10V and ID is 10A. It also features a typical Gate Charge of 30nC and typical input capacitance of 1000pF.
Thermal characteristics include an operating temperature range from -55°C to 150°C and a maximum power dissipation of 156W at 25°C. The device is suitable for applications requiring robust power handling in a surface mount form factor.
This MOSFET is designed for high energy power applications, offering a balance of voltage, current, and resistance characteristics suitable for various power switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage is 400V.
The continuous drain current is 10A.
The maximum ON-State Resistance is 0.12 Ohms.
The operating temperature range is -55°C to 150°C.
The MTB10N40E is supplied in a D2PAK package for surface mounting.