| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,566 pcs
|
3566 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Technology |
The IRF242 is an N-Channel enhancement-mode MOSFET manufactured by Infineon Technologies. It is constructed using MOSFET (Metal Oxide) technology and is intended for high-voltage switching applications. Key electrical characteristics include a maximum drain-to-source voltage of 200V, a maximum continuous drain current of 16A, and a maximum power dissipation of 125W. The device is packaged in the industry-standard TO-204AA (TO-3) package and is designed for through-hole mounting, ensuring reliable thermal and mechanical connections. The component carries an MSL rating of 1 (unlimited), indicating no special moisture sensitivity precautions are required. It is listed as RoHS3 compliant, supporting environmental compliance in designs. This MOSFET is commonly used in power supplies, motor drives, and other industrial applications that require robust high-voltage switching performance. The through-hole packaging facilitates easy integration into a wide range of circuit board designs.
200V.
16A.
125W.
TO-204AA (TO-3).
Through hole.
It is listed as RoHS3 compliant, but this status is unverified.
N-Channel.