| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,538 pcs
|
3538 pcs | On Request | 1 | On Request | On Request | 1613+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RRH140P03TB1 is a P-Channel MOSFET with a drain-to-source voltage of 30V and a continuous drain current of 14A. It features a low on-resistance of 7mOhm at 14A and 10V Vgs, and a gate threshold voltage of 2.5V at 1mA.
This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 650mW (Ta). The input capacitance is 8000pF at 10V Vds, and the gate charge is 80nC at 5V Vgs. The maximum gate-to-source voltage is ±20V.
Packaged in an 8-SOP (Surface Mount) configuration, the RRH140P03TB1 is suitable for applications requiring efficient power switching. Its technology is MOSFET (Metal Oxide).
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 30 V.
The maximum continuous drain current is 14A (Ta).
The maximum on-resistance is 7mOhm at 14A and 10V Vgs.
The operating temperature is 150°C (TJ).
It is supplied in an 8-SOIC (0.154", 3.90mm Width) package.