| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,520 pcs
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3520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRLSL4030PBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-efficiency power switching applications, offering a drain-to-source voltage of 100V and a continuous drain current of 180A at 25°C case temperature. The device features a very low typical on-resistance of 3.4mOhm at 10V gate drive, with a maximum of 4.3mOhm, and is optimized for logic-level drive with a gate threshold voltage between 1.0V and 2.5V.
This MOSFET supports high-speed switching with a typical gate charge of 87nC and a maximum input capacitance of 11360pF. It is rated for a maximum power dissipation of 370W at 25°C case temperature and operates over a junction temperature range of -55°C to 175°C. The device also offers robust avalanche energy handling of 305mJ and a peak diode recovery dv/dt of 21V/ns.
The IRLSL4030PBF is available in a TO-262-3 package with long leads (I2Pak, TO-262AA) and is designed for through-hole mounting. It is suitable for applications such as DC motor drives, high-efficiency synchronous rectification in switched-mode power supplies, uninterruptible power supplies, and high-speed power switching circuits.
The drain-to-source voltage (Vdss) is 100V.
The continuous drain current is 180A at Tc=25°C and 130A at Tc=100°C.
The on-resistance is 3.4mOhm typical and 4.3mOhm maximum at Vgs=10V, Id=110A.
The operating junction temperature range is -55°C to 175°C.
The package is TO-262-3 with long leads (I2Pak, TO-262AA), and the supplier device package is TO-262.
The part is marked as RoHS3 compliant, but this status is unverified.