SQ4410EY-T1_BE3 SQ4410EY-T1_BE3 is a 30V, 15A N-Channel MOSFET from Vishay Dale in an 8-SOIC package. It features a typical gate-source threshold voltage of 2V, with a 2.5V maximum.
Mfr Part #:

SQ4410EY-T1_BE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
SQ4410EY-T1_BE3 is a 30V, 15A N-Channel MOSFET from Vishay Dale in an 8-SOIC package. It features a typical gate-source threshold voltage of 2V, with a 2.5V maximum.
✓ Total Stock: 3,540 pcs
$ Price Range: $2.56

SQ4410EY-T1_BE3 Available from 1 distributor

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✓ Non-Authorised
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3,540 pcs
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SQ4410EY-T1_BE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQ4410EY-T1_BE3 Description

Short technical summary and product information.

SQ4410EY-T1_BE3 is an N-channel MOSFET from Vishay Dale, designed for low-voltage power switching applications. It has a minimum drain-source breakdown voltage of 30 V and a continuous drain current rating of 15 A. The device is housed in an 8-SOIC surface-mount package.

 

The gate-source threshold voltage is typically 2 V, with a maximum of 2.5 V at a drain current of 250 µA. This low threshold voltage supports efficient switching in logic-level drive circuits.

 

With a 30 V rating and 15 A capability, this MOSFET suits DC-DC converters, load switches, and other power management circuits in space-constrained designs. The 8-SOIC package provides a compact footprint for automated assembly.

SQ4410EY-T1_BE3 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: N-Channel MOSFET 30V 15A 8-SOIC
Subcategory: Single MOSFET

SQ4410EY-T1_BE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: Compliant

SQ4410EY-T1_BE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQ4410EY-T1_BE3 Features

  • 30V drain-source breakdown voltage rating.
  • 15A continuous drain current capability.
  • Available in 8-SOIC surface-mount package.
  • 2V typical gate-source threshold voltage.
  • Single N-channel enhancement-mode MOSFET switch.

SQ4410EY-T1_BE3 Applications

  • Used in automotive power management systems.
  • Suitable for DC-DC converter circuits.
  • Ideal for load switching applications.
  • Designed for motor control in automotive.
  • Used in battery protection circuits.

SQ4410EY-T1_BE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The minimum drain-source breakdown voltage is 30 V at VGS = 0 V and ID = 250 µA.

What is the gate-source threshold voltage?

The gate-source threshold voltage is typically 2 V, with a maximum of 2.5 V at ID = 250 µA.

What is the package type?

The package type is 8-SOIC.

What is the continuous drain current rating?

The continuous drain current rating is 15 A.

Is this an N-channel MOSFET?

Yes, it is an N-channel MOSFET.

What category does this component belong to?

It belongs to the Transistors - FETs, MOSFETs - Single category.

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