| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,530 pcs
|
3530 pcs | On Request | 1 | On Request | On Request | 1703+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFZ44VPBF is a 60V, 55A N-Channel power MOSFET from Infineon Technologies, designed for high-efficiency power switching and regulation applications. It features a maximum drain-source on-resistance of 16.5 mΩ at 10V gate drive and 31A drain current, minimizing conduction losses in high-current circuits. The device supports a gate threshold voltage of up to 4V at 250µA and a maximum gate charge of 67 nC at 10V, enabling fast switching performance.
Packaged in a standard through-hole TO-220-3 (TO-220AB) package, this MOSFET is suitable for automated assembly in power supply, motor control, and DC-DC converter designs. It operates over a junction temperature range of -55°C to 175°C and can dissipate up to 115W at case temperature 25°C. The input capacitance is 1812 pF at 25V drain-source bias, and the maximum gate-source voltage is ±20V.
| Qty | Low | High |
|---|---|---|
| 2,000+ | $0.58 | $0.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 60 V.
At Tc = 25°C, the continuous drain current is 55 A.
The package is TO-220-3 with a supplier device package of TO-220AB, through-hole mounting.
The junction temperature range is -55°C to 175°C.
At Id = 31 A and Vgs = 10 V, the maximum on-resistance is 16.5 mΩ.
The maximum gate threshold voltage is 4 V at Id = 250 µA.
At Tc = 25°C, the maximum power dissipation is 115 W.