| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,550 pcs
|
3550 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF4N90K5 is a single N-Channel MOSFET from the MOSFET (Metal Oxide) technology family. It is designed for applications requiring high voltage switching capabilities, featuring a maximum drain-to-source voltage (Vdss) of 900V and a continuous drain current of 4A (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 2.1 Ohm at 1A and 10V, a maximum gate charge (Qg) of 5.3 nC at 10V, and an input capacitance (Ciss) of 173 pF at 100V. The gate threshold voltage (Vgs(th)) is 5V at 100µA, with a maximum gate-source voltage (Vgs) of ±30V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 20W (Tc). It is housed in a TO-220FP package and utilizes a through-hole mounting type.
The STF4N90K5 is specified as RoHS3 Compliant, with an MSL of 1 Unlimited, and REACH Unaffected. However, these compliance statuses are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
900V maximum.
4A maximum at Tc.
2.1 Ohms maximum at 1A and 10V.
5.3 nC maximum at 10V.
173 pF maximum at 100V.
-55°C to 150°C junction temperature.
TO-220FP (TO-220-3) through-hole package.