| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,689 pcs
|
2689 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
839 pcs
|
839 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQU5N60CTU is an N-Channel MOSFET manufactured by On Semiconductor. It is designed for high-voltage switching applications with a drain-source voltage rating of 600V and a continuous drain current of 2.8A at case temperature.
The device features a maximum on-resistance of 2.5 Ohms at a gate-source voltage of 10V and a drain current of 1.4A. The gate threshold voltage is 4V maximum at 250µA. Input capacitance is 670 pF at 25V drain-source, and total gate charge is 19 nC at 10V. The maximum gate-source voltage is ±30V.
Power dissipation is rated at 2.5W at ambient temperature and 49W at case temperature. The operating junction temperature range is -55°C to 150°C. The MOSFET is available in a through-hole TO-251-3 (I-PAK) package, suitable for automated insertion.
Typical applications include power supplies, DC-DC converters, and motor control circuits where high voltage and moderate current switching is required.
| Qty | Low | High |
|---|---|---|
| 496+ | $0.60 | $0.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-251-3 (I-PAK) through-hole package.
-55°C to 150°C junction temperature.
Yes, it is listed as RoHS3 Compliant (unverified).
4V at 250µA drain current.
2.5 Ohm maximum at 1.4A and 10V gate drive.
19 nC at 10V gate-source voltage.