| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,569 pcs
|
3569 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQPF15P12 is a P-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for medium-power switching applications requiring a drain-source voltage of 120V and a continuous drain current of 15A.
Key electrical characteristics include a maximum on-resistance of 200mΩ at a gate-source voltage of 10V and a drain current of 7.5A. The device features a maximum gate threshold voltage of 4V at 250µA drain current. Input capacitance is 1100pF at 25V drain-source, and total gate charge is 38nC at 10V.
The MOSFET is housed in a TO-220-3 Full Pack package with a supplier device package designation of TO-220F-3. It supports through-hole mounting and can operate over a junction temperature range of -55°C to 175°C. Maximum power dissipation is 41W at case temperature.
The maximum drain-source voltage (Vdss) is 120V.
The maximum drain current is 15A at case temperature (Tc).
The maximum on-resistance (Rds on) is 200mΩ at a drain current of 7.5A and gate-source voltage of 10V.
The FQPF15P12 is available in a TO-220-3 Full Pack package (supplier device package TO-220F-3) for through-hole mounting.
The operating junction temperature range is -55°C to 175°C.
The FQPF15P12 is listed as RoHS3 Compliant, though this status is unverified.