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STP25NM60ND The STP25NM60ND is an N-Channel MOSFET from STMicroelectronics designed for 600V operation with a continuous drain current of 21A. It is packaged in a TO-220-3 case and features through-hole mounting.
Mfr Part #:

STP25NM60ND

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STP25NM60ND is an N-Channel MOSFET from STMicroelectronics designed for 600V operation with a continuous drain current of 21A. It is packaged in a TO-220-3 case and features through-hole mounting.
✓ Total Stock: 3,566 pcs
$ Price Range: $2.56

STP25NM60ND Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
3,566 pcs
On Request
3566 pcs On Request 1 On Request On Request On Request On Request On Request
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STP25NM60ND Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STP25NM60ND Description

Short technical summary and product information.

The STP25NM60ND is a single N-Channel MOSFET manufactured by STMicroelectronics. It offers a high drain-source voltage rating of 600V and a continuous drain current capability of 21A at case temperature.

 

This MOSFET utilizes Metal Oxide Semiconductor technology and has a maximum on-resistance of 160mOhm at 10.5A and 10V gate-source voltage. The gate charge is specified at 80nC maximum at 10V, with a gate threshold voltage of 5V at 250µA. The maximum gate-source voltage is ±25V.

 

Designed for through-hole mounting, the STP25NM60ND comes in a TO-220-3 package. It has an operating temperature range up to 150°C (TJ) and a maximum power dissipation of 160W (Tc). The input capacitance (Ciss) is 2400pF at 50V.

 

Environmental compliance includes RoHS3 compliance and MSL 1 rating. REACH status is unaffected.

STP25NM60ND Quick Information

Product Type: MOSFET
Canonical Name: STP25NM60ND N-Channel MOSFET
Subcategory: N-Channel

STP25NM60ND Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STP25NM60ND Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STP25NM60ND Features

  • 600V drain-source voltage rating.
  • 21A continuous drain current.
  • 160mOhm maximum on-resistance.
  • TO-220-3 package for through-hole mounting.
  • RoHS3 compliant.

STP25NM60ND Applications

  • Used in high-voltage power supply circuits.
  • Suitable for motor control and inverter applications.
  • Ideal for switching regulators and converters.
  • Applicable in DC-DC converters and power factor correction.

STP25NM60ND FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the STP25NM60ND?

The maximum drain-source voltage is 600 V.

What is the package type of the STP25NM60ND?

The package is TO-220-3 (through-hole).

What is the maximum operating junction temperature?

The maximum junction temperature is 150°C.

What is the continuous drain current rating?

The continuous drain current is 21 A at case temperature.

What is the gate threshold voltage?

The maximum gate threshold voltage is 5V at 250µA drain current.

What is the typical on-resistance?

The maximum on-resistance is 160 mOhm at 10.5A drain current and 10V gate-source voltage.

What is the mounting type?

The device is through-hole mount.

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