| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,550 pcs
|
3550 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The RSJ450N04TL from ROHM Semiconductor is a high-performance N-Channel MOSFET. It is rated for a drain-source voltage (Vdss) of 40V and can handle a continuous drain current (Id) of 45A at 25°C. The on-resistance (Rds On) is specified as a maximum of 13.5mOhm when tested at 25A and 10V gate-source voltage.
This MOSFET utilizes Metal Oxide Semiconductor (MOS) technology and is designed for surface mounting, utilizing the TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package. Key electrical parameters include a gate charge (Qg) of 43 nC at 10V and an input capacitance (Ciss) of 2400 pF at 25V. The threshold voltage (Vgs(th)) is a maximum of 3V at 1mA, and the maximum gate-source voltage (Vgs) is ±20V.
With a maximum power dissipation of 50W (Tc) and an operating junction temperature of up to 150°C, the RSJ450N04TL is suitable for various power management applications. The component is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 40V.
The continuous drain current (Id) at 25°C (Ta) is 45A.
The maximum on-resistance is 13.5mOhm at 25A drain current and 10V gate-source voltage.
The maximum gate threshold voltage (Vgs(th)) is 3V at a drain current of 1mA.
The device is offered in a TO-263-3 (D²Pak) surface mount package, with supplier device package LPTS.
The maximum junction temperature is 150°C.
The maximum gate charge (Qg) is 43nC at a gate-source voltage of 10V.