| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,542 pcs
|
3542 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSZ033NE2LS5ATMA1 is an N-channel enhancement mode power MOSFET from Infineon's OptiMOS 5 family. It is designed for high-performance buck converters and high-frequency switched-mode power supplies. Key electrical characteristics include a drain-source voltage rating of 25 V, continuous drain current of 18 A at 25°C ambient temperature (40 A at case temperature), and a maximum on-resistance of 3.3 mΩ at Vgs = 10 V and Id = 20 A. The device features very low gate charge (18.3 nC max at 10 V) and input capacitance (1230 pF at Vds = 12 V), contributing to low switching losses.
The MOSFET is 100% avalanche tested with a single-pulse avalanche energy rating of 20 mJ. It operates over a junction temperature range of -55°C to 150°C. The device is housed in a surface-mount 8-PowerTDFN package (PG-TSDSON-8-FL), which offers excellent thermal performance. It is RoHS compliant and halogen-free according to IEC 61249-2-21.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.87 | $0.87 |
| 5,000+ | $0.22 | $0.22 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
25 V.
8-PowerTDFN (PG-TSDSON-8-FL).
-55°C to 150°C.
Yes, RoHS compliant and halogen-free according to IEC61249-2-21.
3.3 mΩ at Vgs=10V, Id=20A.
18.3 nC maximum at Vgs=10V.