| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,539 pcs
|
3539 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Height | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD13302W is a 12V N-Channel NexFET power MOSFET designed by Texas Instruments for low-voltage power management applications. It offers a maximum drain current of 1.6A and a low on-resistance of 17.1mΩ at Vgs=4.5V, with a typical gate charge of 6nC. The device is logic-level compatible, enabling direct drive from low-voltage logic. It is housed in a 4-DSBGA (1x1mm) surface-mount package with a low profile of 0.62mm, making it suitable for space-constrained designs. The MOSFET is RoHS compliant, lead-free, and halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.59 | $0.59 |
| 10+ | $0.37 | $0.37 |
| 50+ | $0.26 | $0.26 |
| 100+ | $0.23 | $0.23 |
| 500+ | $0.17 | $0.17 |
| 3,000+ | $0.13 | $0.13 |
| 9,000+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
12V.
4-DSBGA (1x1mm) surface-mount package.
-55°C to 150°C (junction).
Yes, it is RoHS compliant, lead-free, and halogen-free.
17.1mΩ maximum at 1A, 4.5V.
6nC typical at 4.5V.
1.6A at 25°C case temperature.