| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,580 pcs
|
3580 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from Toshiba, part number TPC8092,LQ(S, is suitable for various electronic applications requiring efficient switching. It operates with a drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 15A at 25°C. The MOSFET technology utilizes a metal oxide semiconductor.
The device is packaged in an 8-SOP (Small Outline Package) and is designed for surface mounting. Key electrical characteristics include a maximum on-resistance (Rds On) of 9mOhm at 7.5A and 10V gate-source voltage, and a gate threshold voltage (Vgs(th)) of 2.3V at 200µA. The maximum gate-source voltage is ±20V.
With a maximum power dissipation of 1W (Ta) and an operating temperature range up to 150°C (TJ), this MOSFET is built for reliable performance. Its input capacitance (Ciss) is 1800 pF at 10V, and the gate charge (Qg) is 25 nC at 10V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
15A at 25°C.
9mΩ at 7.5A gate drive of 10V.
Surface-mount 8-SOIC, also designated 8-SOP.
150°C.
4.5V and 10V.
1800pF at 10V drain-source voltage.