| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,566 pcs
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3566 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF5305SPBF is a P-Channel enhancement-mode MOSFET designed and manufactured by Infineon Technologies. It utilizes MOSFET (Metal Oxide) technology and is specified for a maximum drain-to-source voltage of 55V and a continuous drain current of 31A at the case temperature (Tc). The device offers a maximum on-resistance (Rds(on)) of 60mOhm when driven with a 10V gate voltage at a drain current of 16A.
This MOSFET is suitable for a variety of power management and switching applications. It has a maximum gate threshold voltage of 4V at 250µA and can be driven with a 10V gate drive. The total gate charge is 63 nC at 10V, and the input capacitance is 1200 pF at 25V. The device can dissipate up to 110W at the case temperature (Tc) and operates over a junction temperature range of -55°C to 175°C.
The IRF5305SPBF is offered in a surface-mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, commonly referred to as D2PAK. This package is designed for efficient heat transfer and is suitable for automated assembly processes.
The maximum drain-to-source voltage (Vdss) is 55V.
The continuous drain current is 31A at the case temperature (Tc).
The maximum on-resistance (Rds(on)) is 60mOhm at a gate voltage of 10V and a drain current of 16A.
It is available in a surface-mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, also known as D2PAK.
The operating junction temperature range is -55°C to 175°C.
The part is listed as RoHS3 Compliant, but this status is unverified and should be treated as low-confidence.