What are Transistors - FETs, MOSFETs - Single ?
Parts in this category
Tap rows to select parts
Compare stocked parts across manufacturers and distributors, then add lines to your RFQ.
| Part & Mfr | Total Stock | Pricing & RFQ | Current | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Operating Temperature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Technology | Vgs (Max) | Vgs(th) (Max) @ Id | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay
|
7,020
|
Price on request
7,020
|
16A (Tc) | 20 V | 1.8V, 4.5V | - | N-Channel | 20 nC @ 8 V | 830 pF @ 10 V | Surface Mount | -55°C ~ 150°C (TJ) | 2.77W (Ta), 13W (Tc) | 33mOhm @ 1A, 4.5V | 6-Micro Foot™ (1.5x1) | MOSFET (Metal Oxide) | ±8V | 850mV @ 250µA | |
Infineon Technologies
|
7,020
|
Price on request
7,020
|
78A (Tc) | 30 V | 4.5V, 10V | - | N-Channel | 54 nC @ 4.5 V | 5110 pF @ 15 V | Through Hole | -55°C ~ 175°C (TJ) | 140W (Tc) | 3.2mOhm @ 40A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 2.35V @ 100µA | |
STMicroelectronics
|
7,015
|
Price on request
7,015
|
10A (Tc) | 600 V | 10V | - | N-Channel | 30.5 nC @ 10 V | 960 pF @ 50 V | Through Hole | -55°C ~ 150°C (TJ) | 90W (Tc) | 410mOhm @ 5A, 10V | TO-220 | MOSFET (Metal Oxide) | ±25V | 4V @ 250µA | |
On Semiconductor
|
7,012
|
Price on request
7,012
|
16.8A (Tc) | 60 V | 10V | - | N-Channel | 15 nC @ 10 V | 590 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 2.5W (Ta), 38W (Tc) | 63mOhm @ 8.4A, 10V | TO-252, (D-Pak) | MOSFET (Metal Oxide) | ±25V | 4V @ 250µA | |
Diodes Incorporated
|
7,005
|
Price on request
7,005
|
2.7A (Ta) | 30 V | 4.5V, 10V | - | P-Channel | - | 227 pF @ 10 V | Surface Mount | -55°C ~ 150°C (TJ) | 1.08W (Ta) | 122mOhm @ 2.7A, 10V | SOT-23-3 | MOSFET (Metal Oxide) | ±20V | 2.1V @ 250µA | |
On Semiconductor
|
7,000
|
Price on request
7,000
|
600mA (Ta) | 20 V | 1.8V, 4.5V | - | N-Channel | 1.1 nC @ 4.5 V | 60 pF @ 10 V | Surface Mount | -55°C ~ 150°C (TJ) | 625mW (Ta) | 300mOhm @ 600mA, 4.5V | SC-89-3 | MOSFET (Metal Oxide) | ±12V | 1.5V @ 250µA | |
STMicroelectronics
|
7,000
|
Price on request
7,000
|
11A (Tc) | 650 V | 10V | - | N-Channel | 30 nC @ 10 V | 1000 pF @ 25 V | Surface Mount | -65°C ~ 150°C (TJ) | 160W (Tc) | 450mOhm @ 5.5A, 10V | D2PAK | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
STMicroelectronics
|
7,000
|
Price on request
7,000
|
70A (Tc) | 30 V | 5V, 10V | - | N-Channel | 30 nC @ 5 V | 1440 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 100W (Tc) | 9.5mOhm @ 35A, 10V | D2PAK | MOSFET (Metal Oxide) | ±18V | 1V @ 250µA | |
On Semiconductor
|
7,000
|
Price on request
7,000
|
2.6A (Ta) | 59 V | 3.5V, 10V | - | N-Channel | 4.5 nC @ 4.5 V | 155 pF @ 35 V | Surface Mount | -55°C ~ 150°C (TJ) | 1.69W (Ta) | 110mOhm @ 2.6A, 10V | SOT-223 (TO-261) | MOSFET (Metal Oxide) | ±15V | 1.9V @ 100µA | |
On Semiconductor
|
7,000
|
Price on request
7,000
|
4A (Ta) | 60 V | 4V, 10V | - | N-Channel | 10 nC @ 10 V | 505 pF @ 20 V | Surface Mount | 150°C (TJ) | 1.5W (Ta) | 78mOhm @ 2A, 10V | 6-MCPH | MOSFET (Metal Oxide) | ±20V | - | |
Vishay
|
7,000
|
Price on request
7,000
|
35.1A (Ta), 127.5A (Tc) | 20 V | 2.5V, 10V | - | P-Channel | 236 nC @ 8 V | 7080 pF @ 10 V | Surface Mount | -55°C ~ 150°C (TJ) | 5W (Ta), 65.8W (Tc) | 2.7mOhm @ 15A, 10V | PowerPAK® 1212-8S | MOSFET (Metal Oxide) | ±12V | 1.5V @ 250µA | |
On Semiconductor
|
7,000
|
Price on request
7,000
|
22.5A (Tc) | 60 V | 5V, 10V | - | N-Channel | 20 nC @ 5 V | 1040 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 38W (Tc) | 35mOhm @ 11.3A, 10V | TO-220F-3 | MOSFET (Metal Oxide) | ±20V | 2.5V @ 250µA | |
STMicroelectronics
|
7,000
|
Price on request
7,000
|
20A (Tc) | 550 V | 10V | - | N-Channel | 56 nC @ 10 V | 1480 pF @ 25 V | Surface Mount | -65°C ~ 150°C (TJ) | 192W (Tc) | 250mOhm @ 10A, 10V | D2PAK | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
Toshiba
|
7,000
|
Price on request
7,000
|
5.8A (Ta) | 650 V | 10V | - | N-Channel | 11 nC @ 10 V | 390 pF @ 300 V | Through Hole | 150°C (TJ) | 60W (Tc) | 1.05Ohm @ 2.9A, 10V | I-Pak | MOSFET (Metal Oxide) | ±30V | 3.5V @ 180µA | |
Toshiba
|
7,000
|
Price on request
7,000
|
10A (Ta) | 30 V | 4.5V, 10V | Schottky Diode (Body) | N-Channel | 15 nC @ 10 V | 1700 pF @ 10 V | Surface Mount | 150°C (TJ) | 1W (Ta) | 13.3mOhm @ 5A, 10V | 8-SOP (5.5x6.0) | MOSFET (Metal Oxide) | ±20V | 2.3V @ 1mA | |
Vishay
|
7,000
|
Price on request
7,000
|
90A (Tc) | 40 V | - | - | P-Channel | 120 nC @ 10 V | 5500 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 183W (Tc) | 12.5mOhm @ 10A, 10V | PowerPAK® SO-8 | MOSFET (Metal Oxide) | ±20V | 2.5V @ 250µA | |
STMicroelectronics
|
7,000
|
Price on request
7,000
|
2.5A (Tc) | 525 V | 10V | - | N-Channel | 11 nC @ 10 V | 334 pF @ 100 V | Through Hole | 150°C (TJ) | 45W (Tc) | 2.6Ohm @ 1.25A, 10V | TO-220 | MOSFET (Metal Oxide) | ±30V | 4.5V @ 50µA | |
STMicroelectronics
|
7,000
|
Price on request
7,000
|
4A (Tc) | 600 V | 10V | - | N-Channel | 26 nC @ 10 V | 510 pF @ 25 V | Through Hole | 150°C (TJ) | 70W (Tc) | 2Ohm @ 2A, 10V | I2PAK | MOSFET (Metal Oxide) | ±30V | 4.5V @ 50µA | |
Nexperia USA Inc.
|
7,000
|
Price on request
7,000
|
2A (Ta) | 20 V | 4.5V | - | P-Channel | 6.5 nC @ 4.5 V | 418 pF @ 10 V | Surface Mount | -55°C ~ 150°C (TJ) | 480mW (Ta) | 170mOhm @ 2A, 4.5V | TO-236AB | MOSFET (Metal Oxide) | ±8V | 950mV @ 250µA | |
Infineon Technologies
|
7,000
|
Price on request
7,000
|
680mA (Ta) | 100 V | 4.5V, 10V | - | P-Channel | 6.4 nC @ 10 V | 146 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 1.8W (Ta) | 1.8Ohm @ 680mA, 10V | PG-SOT223-4-21 | MOSFET (Metal Oxide) | ±20V | 2V @ 170µA | |
NXP Semiconductors
|
7,000
|
Price on request
7,000
|
1.52A (Ta) | 12 V | 1.8V, 4.5V | - | P-Channel | 8.8 nC @ 4.5 V | 500 pF @ 9.6 V | Surface Mount | -55°C ~ 150°C (TJ) | 417mW (Ta) | 120mOhm @ 1A, 4.5V | 6-TSOP | MOSFET (Metal Oxide) | ±8V | 600mV @ 1mA (Typ) | |
Toshiba
|
7,000
|
Price on request
7,000
|
11A (Ta) | 30 V | 4.5V, 10V | - | N-Channel | 11 nC @ 10 V | 640 pF @ 10 V | Surface Mount | 150°C (TJ) | 1W (Ta) | 17mOhm @ 5.5A, 10V | 8-SOP (5.5x6.0) | MOSFET (Metal Oxide) | ±20V | 2.3V @ 1mA | |
STMicroelectronics
|
7,000
|
Price on request
7,000
|
2.7A (Tc) | 620 V | 10V | - | N-Channel | 13 nC @ 10 V | 385 pF @ 25 V | Through Hole | 150°C (TJ) | 20W (Tc) | 2.5Ohm @ 1.4A, 10V | TO-220FP | MOSFET (Metal Oxide) | ±30V | 4.5V @ 50µA | |
On Semiconductor
|
7,000
|
Price on request
7,000
|
35A (Ta), 185A (Tc) | 40 V | 4.5V, 10V | - | N-Channel | 71 nC @ 10 V | 4301 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 3.8W (Ta), 107.1W (Tc) | 1.6mOhm @ 50A, 10V | LFPAK4 (5x6) | MOSFET (Metal Oxide) | ±20V | 3V @ 210µA | |
STMicroelectronics
|
7,000
|
Price on request
7,000
|
20A (Tc) | 600 V | 10V | - | N-Channel | 37 nC @ 10 V | 1300 pF @ 25 V | Through Hole | -65°C ~ 150°C (TJ) | 45W (Tc) | 290mOhm @ 10A, 10V | TO-220FP | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
On Semiconductor
|
7,000
|
Price on request
7,000
|
4.2A (Tc) | 900 V | 10V | - | N-Channel | 30 nC @ 10 V | 1100 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 3.13W (Ta), 140W (Tc) | 3.3Ohm @ 2.1A, 10V | I2PAK (TO-262) | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
STMicroelectronics
|
7,000
|
Price on request
7,000
|
80A (Tc) | 55 V | 10V | - | N-Channel | 112 nC @ 10 V | 3740 pF @ 15 V | Surface Mount | -55°C ~ 175°C (TJ) | 300W (Tc) | 8mOhm @ 40A, 10V | D²PAK | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Infineon Technologies
|
6,984
|
Price on request
6,984
|
18A (Ta) | 30 V | 4.5V | - | N-Channel | 60 nC @ 5 V | 5500 pF @ 16 V | Surface Mount | -55°C ~ 150°C (TJ) | 3.1W (Ta) | 6.5mOhm @ 15A, 4.5V | 8-SO | MOSFET (Metal Oxide) | ±12V | 1V @ 250µA | |
Toshiba
|
6,971
|
Price on request
6,971
|
16A (Ta) | 30 V | 4.5V, 10V | - | N-Channel | 20 nC @ 10 V | 1600 pF @ 10 V | Surface Mount | 150°C (TJ) | 1.6W (Ta), 25W (Tc) | 11.4mOhm @ 8A, 10V | 8-SOP Advance (5x5) | MOSFET (Metal Oxide) | ±20V | 2.3V @ 200µA | |
On Semiconductor
|
6,965
|
Price on request
6,965
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
Vishay
|
6,965
|
Price on request
6,965
|
560mA (Ta) | 200 V | 10V | - | P-Channel | 15 nC @ 10 V | 340 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 1W (Ta) | 1.5Ohm @ 340mA, 10V | 4-HVMDIP | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Vishay
|
6,958
|
Price on request
6,958
|
240mA (Ta) | 60 V | 4.5V, 10V | - | N-Channel | 0.6 nC @ 4.5 V | 21 pF @ 5 V | Surface Mount | -55°C ~ 150°C (TJ) | 350mW (Ta) | 3Ohm @ 250mA, 10V | SOT-23-3 (TO-236) | MOSFET (Metal Oxide) | ±20V | 2.5V @ 250µA | |
STMicroelectronics
|
6,943
|
Price on request
6,943
|
20A (Tc) | 600 V | 10V | - | N-Channel | 54 nC @ 10 V | 1500 pF @ 25 V | Through Hole | 150°C (TJ) | 192W (Tc) | 290mOhm @ 10A, 10V | I2PAK | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
On Semiconductor
|
6,936
|
Price on request
6,936
|
14A (Ta), 50A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
Vishay
|
6,927
|
Price on request
6,927
|
18A (Tc) | 60 V | 10V | - | P-Channel | 34 nC @ 10 V | 1100 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 88W (Tc) | 140mOhm @ 11A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
On Semiconductor
|
6,922
|
Price on request
6,922
|
2.6A (Ta) | 59 V | 3.5V, 10V | - | N-Channel | 4.5 nC @ 4.5 V | 155 pF @ 35 V | Surface Mount | -55°C ~ 150°C (TJ) | 1.69W (Ta) | 110mOhm @ 2.6A, 10V | SOT-223 (TO-261) | MOSFET (Metal Oxide) | ±15V | 1.9V @ 100µA | |
Vishay
|
6,920
|
Price on request
6,920
|
9.2A (Ta), 53A (Tc) | 60 V | 4.5V, 10V | - | P-Channel | 115 nC @ 10 V | 3500 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 3.1W (Ta), 104.2W (Tc) | 19.5mOhm @ 30A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 3V @ 250µA | |
On Semiconductor
|
6,898
|
Price on request
6,898
|
10A (Ta) | 60 V | 6V, 10V | - | N-Channel | 70 nC @ 10 V | 2900 pF @ 15 V | Surface Mount | -55°C ~ 150°C (TJ) | 2.5W (Ta) | 14mOhm @ 10A, 10V | 8-SOIC | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
On Semiconductor
|
6,898
|
Price on request
6,898
|
60A (Ta) | 30 V | 4.5V, 10V | - | N-Channel | 24 nC @ 5 V | 1760 pF @ 15 V | Through Hole | -65°C ~ 175°C (TJ) | 60W (Tc) | 9mOhm @ 30A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±20V | 3V @ 250µA | |
Vishay
|
6,898
|
Price on request
6,898
|
17A (Tc) | 200 V | 4V, 5V | - | N-Channel | 66 nC @ 5 V | 1800 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 3.1W (Ta), 125W (Tc) | 180mOhm @ 10A, 5V | D²PAK (TO-263) | MOSFET (Metal Oxide) | ±10V | 2V @ 250µA | |
On Semiconductor
|
6,898
|
Price on request
6,898
|
15A (Ta), 50A (Tc) | 30 V | 4.5V, 10V | - | N-Channel | 31.5 nC @ 10 V | 1440 pF @ 15 V | Surface Mount | -55°C ~ 175°C (TJ) | 3.8W (Ta), 52W (Tc) | 8.8mOhm @ 15A, 10V | TO-252AA | MOSFET (Metal Oxide) | ±20V | 3V @ 250µA | |
STMicroelectronics
|
6,898
|
Price on request
6,898
|
5A (Tc) | 500 V | 10V | - | N-Channel | 12 nC @ 10 V | 400 pF @ 50 V | Surface Mount | -55°C ~ 150°C (TJ) | 45W (Tc) | 780mOhm @ 2.5A, 10V | DPAK | MOSFET (Metal Oxide) | ±25V | 4V @ 250µA | |
STMicroelectronics
|
6,888
|
Price on request
6,888
|
30A (Tc) | 650 V | 10V | - | N-Channel | 71 nC @ 10 V | 3000 pF @ 100 V | Surface Mount | 150°C (TJ) | 190W (Tc) | 95mOhm @ 15A, 10V | D²PAK (TO-263) | MOSFET (Metal Oxide) | ±25V | 5V @ 250µA | |
Vishay
|
6,885
|
Price on request
6,885
|
4.7A (Tc) | 60 V | 4.5V, 10V | - | P-Channel | 22 nC @ 10 V | 600 pF @ 30 V | Surface Mount | -55°C ~ 150°C (TJ) | 5W (Tc) | 120mOhm @ 3.2A, 10V | 8-SOIC | MOSFET (Metal Oxide) | ±20V | 3V @ 250µA | |
STMicroelectronics
|
6,870
|
Price on request
6,870
|
16A (Tc) | 800 V | 10V | - | N-Channel | 33 nC @ 10 V | 1000 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 190W (Tc) | 280mOhm @ 8A, 10V | TO-220 | MOSFET (Metal Oxide) | ±30V | 5V @ 100µA | |
Texas Instruments
|
6,844
|
Price on request
6,844
|
89A (Tc) | 40 V | 4.5V, 10V | - | N-Channel | 38 nC @ 10 V | 2680 pF @ 20 V | Surface Mount | -55°C ~ 150°C (TJ) | 74W (Tc) | 7.9mOhm @ 15A, 10V | 8-VSONP (5x6) | MOSFET (Metal Oxide) | ±20V | 2.4V @ 250µA | |
On Semiconductor
|
6,839
|
Price on request
6,839
|
12A (Ta), 80A (Tc) | 100 V | 6V, 10V | - | N-Channel | 110 nC @ 10 V | 6000 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 310W (Tc) | 9mOhm @ 80A, 10V | D²PAK (TO-263) | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Infineon Technologies
|
6,837
|
Price on request
6,837
|
64A (Tc) | 60 V | 4.5V, 10V | - | N-Channel | 13 nC @ 4.5 V | 1800 pF @ 30 V | Surface Mount | -55°C ~ 150°C (TJ) | 46W (Tc) | 6.5mOhm @ 32A, 10V | PG-TDSON-8-6 | MOSFET (Metal Oxide) | ±20V | 2.3V @ 20µA | |
On Semiconductor
|
6,817
|
Price on request
6,817
|
37A (Tc) | 600 V | 10V | - | N-Channel | 82 nC @ 10 V | 4165 pF @ 380 V | Through Hole | -55°C ~ 150°C (TJ) | 357W (Tc) | 104mOhm @ 18.5A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±20V | 3.5V @ 250µA | |
STMicroelectronics
|
6,802
|
Price on request
6,802
|
17A (Tc) | 30 V | 5V, 10V | - | N-Channel | 6.5 nC @ 5 V | 320 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 30W (Tc) | 50mOhm @ 8.5A, 10V | TO-251 (IPAK) | MOSFET (Metal Oxide) | ±16V | 2.2V @ 250µA |