| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,539 pcs
|
3539 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SiS862DN is an N-Channel MOSFET designed for various power applications. It features a maximum drain-source voltage of 60V and a continuous drain current of up to 40A at case temperature.
This MOSFET offers low on-resistance values, with Rds(on) as low as 0.0085 Ohms at a gate-source voltage of 10V. It is capable of operating with a 5V gate drive and is 100% Rg and UIS tested, indicating robust performance.
The device is housed in a PowerPAK 1212-8 package, suitable for surface mounting. Key electrical characteristics include an input capacitance of 1320 pF and a gate charge of 32 nC.
Applications for this MOSFET include primary side switching, synchronous rectification, DC/DC converters, boost converters, and DC/AC inverters. It operates within a junction temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
PowerPAK 1212-8 surface mount package.
-55°C to 150°C junction temperature.
40A at case temperature 25°C.
8.5 mOhm maximum at VGS=10V and ID=20A.
2.6V maximum at drain current 250µA.
32 nC maximum at VGS=10V.