| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,500 pcs
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10500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs(th) (Max) @ Id |
The NVMFWS9D6P04M8LT1G from ON Semiconductor is a P-Channel MOSFET designed for power applications. It offers a drain-to-source voltage (Vdss) of 40V and a continuous drain current of up to 17.1A at ambient temperature (Ta) and 77A at case temperature (Tc).
This MOSFET utilizes Metal Oxide technology and is housed in an 8-PowerTDFN, 5-lead package with a surface mount, wettable flank mounting type. Key electrical characteristics include a maximum gate-source voltage (Vgs) of ±20V, a gate threshold voltage (Vgs(th)) of 2.4V at 580µA, and a maximum on-resistance (Rds On) of 9.5mOhm at 20A and 10V.
With a maximum power dissipation of 3.7W at Ta and 75W at Tc, and an operating temperature range of -55°C to 175°C (TJ), the NVMFWS9D6P04M8LT1G is suitable for various power management designs. Its specifications make it a viable component for applications requiring efficient switching and power control.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the NVMFWS9D6P04M8LT1G is 40V.
The continuous drain current is 17.1A at ambient temperature (Ta) and 77A at case temperature (Tc).
The NVMFWS9D6P04M8LT1G is supplied in an 8-PowerTDFN, 5-lead package.
The operating temperature range is -55°C to 175°C (TJ).
The RoHS status is listed as RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.