NVMFWS9D6P04M8LT1G The ON Semiconductor NVMFWS9D6P04M8LT1G is a P-Channel MOSFET with a 40V drain-source voltage. It features a surface mountable wettable flank package.
Mfr Part #:

NVMFWS9D6P04M8LT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMFWS9D6P04M8LT1G is a P-Channel MOSFET with a 40V drain-source voltage. It features a surface mountable wettable flank package.
✓ Total Stock: 10,500 pcs
$ Price Range: $0.99

NVMFWS9D6P04M8LT1G Available from 1 distributor

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✓ Non-Authorised
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NVMFWS9D6P04M8LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFWS9D6P04M8LT1G Description

Short technical summary and product information.

The NVMFWS9D6P04M8LT1G from ON Semiconductor is a P-Channel MOSFET designed for power applications. It offers a drain-to-source voltage (Vdss) of 40V and a continuous drain current of up to 17.1A at ambient temperature (Ta) and 77A at case temperature (Tc).

 

This MOSFET utilizes Metal Oxide technology and is housed in an 8-PowerTDFN, 5-lead package with a surface mount, wettable flank mounting type. Key electrical characteristics include a maximum gate-source voltage (Vgs) of ±20V, a gate threshold voltage (Vgs(th)) of 2.4V at 580µA, and a maximum on-resistance (Rds On) of 9.5mOhm at 20A and 10V.

 

With a maximum power dissipation of 3.7W at Ta and 75W at Tc, and an operating temperature range of -55°C to 175°C (TJ), the NVMFWS9D6P04M8LT1G is suitable for various power management designs. Its specifications make it a viable component for applications requiring efficient switching and power control.

NVMFWS9D6P04M8LT1G Quick Information

Product Type: MOSFET
Canonical Name: NVMFWS9D6P04M8LT1G P-Channel MOSFET
Subcategory: Single

NVMFWS9D6P04M8LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFWS9D6P04M8LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFWS9D6P04M8LT1G Features

  • 40V P-Channel MOSFET
  • Surface mount wettable flank package
  • Low Rds On: 9.5mOhm max
  • Wide operating temperature range
  • High current capability

NVMFWS9D6P04M8LT1G Applications

  • Power switching applications
  • Voltage regulation circuits
  • Load management systems
  • Battery powered devices

NVMFWS9D6P04M8LT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NVMFWS9D6P04M8LT1G?

The maximum drain-source voltage (Vdss) for the NVMFWS9D6P04M8LT1G is 40V.

What is the continuous drain current of the NVMFWS9D6P04M8LT1G?

The continuous drain current is 17.1A at ambient temperature (Ta) and 77A at case temperature (Tc).

What is the package type for the NVMFWS9D6P04M8LT1G?

The NVMFWS9D6P04M8LT1G is supplied in an 8-PowerTDFN, 5-lead package.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 175°C (TJ).

Is the NVMFWS9D6P04M8LT1G RoHS compliant?

The RoHS status is listed as RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NVMFWS9D6P04M8LT1G?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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