| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,500 pcs
|
10500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTMFS4C06NBT1G from ON Semiconductor is a high-performance N-channel MOSFET designed for various power applications. It offers a drain-source voltage (Vdss) of 30V and can handle continuous currents of 20A under typical ambient conditions and up to 69A under case temperature conditions.
Key electrical characteristics include a maximum on-resistance (Rds On) of 4mOhm at 30A and 10V gate-source voltage, ensuring efficient power transfer. The MOSFET also features a gate charge (Qg) of 26 nC at 10V and an input capacitance (Ciss) of 1683 pF at 15V.
Operating across a wide temperature range from -55°C to 150°C (TJ), this device is suitable for demanding environments. It is housed in an 8-PowerTDFN, 5-lead package with surface mount technology, facilitating integration into compact designs. The RoHS 3 compliant status indicates adherence to environmental regulations.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the NTMFS4C06NBT1G is 30 V.
The NTMFS4C06NBT1G MOSFET has a continuous current rating of 20A at ambient temperature and 69A at case temperature.
The maximum on-resistance (Rds On) for the NTMFS4C06NBT1G is 4mOhm when measured at 30A drain current and 10V gate-source voltage.
The NTMFS4C06NBT1G operates between -55°C and 150°C.
The NTMFS4C06NBT1G MOSFET is supplied in an 8-PowerTDFN, 5-lead package.
The NTMFS4C06NBT1G MOSFET is designed for surface mount installation.