FQB30N06LTM FQB30N06LTM is an N-Channel MOSFET by ON Semiconductor with 60V drain-source voltage and 32A continuous drain current. It comes in a surface-mount D2PAK (TO-263) package.
Mfr Part #:

FQB30N06LTM

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQB30N06LTM is an N-Channel MOSFET by ON Semiconductor with 60V drain-source voltage and 32A continuous drain current. It comes in a surface-mount D2PAK (TO-263) package.
✓ Total Stock: 10,457 pcs

FQB30N06LTM Available from 3 distributors

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FQB30N06LTM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQB30N06LTM Description

Short technical summary and product information.

The FQB30N06LTM is an N-Channel power MOSFET designed for high-efficiency switching applications. With a drain-to-source voltage rating of 60V and a continuous drain current of 32A at case temperature, it delivers robust performance. The device features a low on-resistance of 35 mOhm maximum at 16A drain current and 10V gate drive, minimizing conduction losses. Its gate threshold voltage is 2.5V maximum, and it requires a drive voltage of 5V to 10V for minimal on-resistance. Electrical characteristics include a gate charge of 20 nC at 5V and an input capacitance of 1040 pF at 25V, enabling fast switching.

 

The MOSFET is housed in a surface-mount D2PAK (TO-263) package, which offers excellent thermal performance and is suitable for automated assembly. The operating junction temperature range spans -55°C to 175°C, allowing use in harsh environments. Typical applications include DC-DC converters, power supplies, motor control, and load switching. Designers should consider adequate heatsinking for high-current operation, as the maximum power dissipation is 79W at case temperature and 3.75W at ambient.

 

This device is part of ON Semiconductor's portfolio of discrete power semiconductors, offering reliable performance for industrial and consumer electronics. Compliance data (RoHS3, MSL Level 1, REACH Unaffected) is reported but has not been independently verified.

FQB30N06LTM Quick Information

Product Type: N-Channel MOSFET
Series: QFET
Canonical Name: FQB30N06LTM N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

FQB30N06LTM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected

FQB30N06LTM Features

  • 60V drain-to-source voltage rating.
  • 32A continuous drain current at Tc.
  • Low 35mOhm on-resistance at 10V drive.
  • Fast switching with 20nC gate charge.
  • Surface mount D2PAK (TO-263) package.

FQB30N06LTM Applications

  • Used in DC-DC converters and power supplies.
  • Suitable for motor control and load switching.
  • Ideal for battery management and protection.

FQB30N06LTM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating?

60V

What is the continuous drain current?

32A at case temperature (Tc)

What is the on-resistance?

35 mOhm maximum at 16A drain current and 10V gate drive

What is the gate threshold voltage?

2.5V maximum at 250µA drain current

What is the operating temperature range?

-55°C to 175°C (junction temperature)

Is this device RoHS compliant?

RoHS3 Compliant (unverified, treat as low confidence)

What package is it available in?

Surface mount D2PAK (TO-263) package

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