FDA59N25 N-Channel MOSFET from On Semiconductor with 250V drain-source voltage, 59A continuous drain current, and 49mOhm on-resistance in a TO-3PN package.
Mfr Part #:

FDA59N25

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET from On Semiconductor with 250V drain-source voltage, 59A continuous drain current, and 49mOhm on-resistance in a TO-3PN package.
✓ Total Stock: 10,379 pcs

FDA59N25 Available from 4 distributors

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✓ Non-Authorised

FDA59N25 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDA59N25 Description

Short technical summary and product information.

The FDA59N25 is an N-Channel MOSFET from On Semiconductor's UniFET family, designed for high-voltage switching applications. It features a drain-source voltage of 250V and a continuous drain current of 59A at 25°C, with a maximum on-resistance of 49mOhm at VGS=10V and ID=29.5A. The device offers low gate charge (typical 63nC) and low reverse transfer capacitance (typical 70pF), enabling efficient switching performance.

 

This MOSFET is 100% avalanche tested, with a single pulsed avalanche energy rating of 1458mJ and an avalanche current capability of 59A. It is housed in a through-hole TO-3P-3 (TO-3PN) package, suitable for high-power designs. The operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 392W at case temperature 25°C.

 

Typical applications include PDP TVs, uninterruptible power supplies, and AC-DC power supplies. The device is RoHS3 compliant and lead-free (Pb-Free).

FDA59N25 Quick Information

Product Type: MOSFET
Series: C0116
Canonical Name: FDA59N25 N-Channel MOSFET
Subcategory: N-Channel

FDA59N25 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FDA59N25 Features

  • N-Channel MOSFET with 250V drain-source voltage.
  • Continuous drain current of 59A at 25°C.
  • Low on-resistance of 49mOhm maximum.
  • Low gate charge of 63nC typical.
  • 100% avalanche tested for ruggedness.

FDA59N25 Applications

  • Used in PDP TV power supplies.
  • Ideal for uninterruptible power supplies.
  • Suitable for AC-DC power converters.
  • Applied in power factor correction circuits.

FDA59N25 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDA59N25?

The drain-source voltage (VDSS) is 250V.

What is the continuous drain current of the FDA59N25?

The continuous drain current is 59A at case temperature 25°C, and 35A at 100°C.

What is the on-resistance of the FDA59N25?

The maximum on-resistance is 49mOhm at VGS=10V and ID=29.5A.

What package does the FDA59N25 come in?

The FDA59N25 is available in a through-hole TO-3P-3 (TO-3PN) package.

What is the operating temperature range of the FDA59N25?

The operating junction temperature range is -55°C to 150°C.

Is the FDA59N25 RoHS compliant?

Yes, the FDA59N25 is RoHS3 compliant and lead-free (Pb-Free).

What is the gate charge of the FDA59N25?

The typical gate charge is 63nC at VGS=10V, with a maximum of 82nC.

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