| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request | |
|
438 pcs
|
438 pcs | On Request | 1 | On Request | On Request | 1710+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD5612 is an N-Channel PowerTrench MOSFET designed for high efficiency DC/DC converters using synchronous or conventional PWM controllers. It features a drain-source voltage rating of 60V and a continuous drain current of 5.4A at 25°C ambient (18A at case temperature 25°C). The on-resistance is typically 55mOhm at Vgs=10V and 64mOhm at Vgs=6V. The device offers fast switching performance with low gate charge (11nC max) and low input capacitance (660pF max). Gate threshold voltage is 3V max at 250µA. The maximum power dissipation is 3.8W at 25°C ambient and 42W at case temperature. It operates over a junction temperature range of -55°C to 175°C. The FDD5612 is housed in a DPAK-3 (TO-252) surface mount package, suitable for automated assembly. It is stated as RoHS compliant and Pb-free.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.43 | $0.43 |
| 5,000+ | $0.40 | $0.40 |
| 7,500+ | $0.38 | $0.38 |
| 12,500+ | $0.38 | $0.38 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
TO-252-3 (DPAK-3) surface mount package.
-55°C to 175°C (junction).
The device is stated as RoHS compliant (RoHS3) but this is unverified.
55mOhm maximum.
3V at 250µA drain current.
11nC at Vgs=10V.