| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,500 pcs
|
7500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,874 pcs
|
1874 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NTD25P03LT4G is a P-Channel MOSFET designed for low voltage, high speed switching applications. It offers a drain-to-source voltage of 30V and a continuous drain current of 25A at 25°C ambient temperature. The device has a maximum power dissipation of 75W (Tj) and an operating temperature range of -55°C to 150°C.
Key electrical characteristics include a maximum Rds(on) of 80mOhm at 25A and 5V Vgs, an input capacitance of 1260pF at 25V, and a gate charge of 20nC at 5V. The gate threshold voltage is 2V at 250µA.
This MOSFET is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting. Its design allows it to withstand high energy in avalanche and commutation modes, with a source-to-drain diode recovery time comparable to a discrete fast recovery diode. Typical applications include PWM motor controls, power supplies, converters, and bridge circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vds) is 30V.
The continuous drain current is 25A at 25°C ambient temperature.
The maximum power dissipation is 75W at 25°C ambient temperature.
The operating temperature range is -55°C to 150°C.
It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
The NTD25P03LT4G MOSFET is designed for surface mounting.
The Rds(on) is a maximum of 80mOhm at 25A drain current and 5V gate-source voltage.