Mfr Part #:

BSC093N04LSGATMA1

N-Channel MOSFET from Infineon with 40V drain-source voltage, 49A continuous drain current, and low 9.3mΩ on-resistance. Surface mount package TDSON-8.

✓ Total Stock: 10,592 pcs

$ Price Range: $0.17 - $0.84

BSC093N04LSGATMA1 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Seba Components ✓ Non-Authorised Inventory information	5,000 pcs On Request	5000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
MW.FEP S.p.A. ✓ Non-Authorised Inventory information	3,203 pcs On Request	3203 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	2,389 pcs On Request	2389 pcs	On Request	1	On Request	On Request	22+	On Request	On Request

BSC093N04LSGATMA1 Description

Short technical summary and product information.

The BSC093N04LSGATMA1 is an N-channel MOSFET from Infineon's OptiMOS 3 series, designed for fast switching in SMPS and DC/DC converters. It features a maximum drain-source voltage of 40V and continuous drain current of 49A at Tc=25°C with Vgs=10V. The on-resistance is typically 7.8mΩ at Vgs=10V, Id=40A, with a maximum of 9.3mΩ. The device is logic level, with gate threshold voltage between 1.2V and 2V at Id=14µA. It offers low gate charge (typical 18nC at Vgs=10V) and fast switching times (turn-on delay 3.6ns, rise time 2.4ns). The MOSFET is 100% avalanche tested and has superior thermal resistance (junction-to-case 3.6 K/W bottom). It is housed in a PG-TDSON-8-5 (8-PowerTDFN) surface mount package. The device is RoHS compliant, Pb-free, and halogen-free according to IEC61249-2-21. Operating temperature range is -55°C to 150°C.

BSC093N04LSGATMA1 Quick Information

Product Type: N-Channel MOSFET

Series: OptiMOS 3

Canonical Name: Infineon BSC093N04LSGATMA1 N-Channel MOSFET 40V 49A TDSON-8

Subcategory: Single N-Channel MOSFET

BSC093N04LSGATMA1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Pb-free plating

BSC093N04LSGATMA1 Estimated Pricing

Qty	Low	High
1+	$0.84	$0.84
10+	$0.52	$0.52
100+	$0.34	$0.34
500+	$0.26	$0.26
1,000+	$0.21	$0.21
5,000+	$0.17	$0.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC093N04LSGATMA1 Features

N-channel logic level MOSFET for fast switching.
40V drain-source voltage, 49A continuous drain current.
Low on-resistance: 9.3mΩ max at Vgs=10V.
Low gate charge: 18nC typical at Vgs=10V.
Surface mount TDSON-8 package, RoHS compliant.

BSC093N04LSGATMA1 Applications

Optimized for DC/DC converter applications.
Suitable for switch mode power supplies (SMPS).
Used in high efficiency power management systems.

BSC093N04LSGATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage?

40V.

What is the continuous drain current at Tc=25°C?

49A at Vgs=10V.

What is the on-resistance?

Maximum 9.3mΩ at Vgs=10V, Id=40A.

What is the operating temperature range?

-55°C to 150°C.

What package is this MOSFET available in?

PG-TDSON-8-5 (8-PowerTDFN).

Is this device RoHS compliant?

Yes, RoHS3 compliant and Pb-free.

What is the gate threshold voltage?

Minimum 1.2V, maximum 2V at Id=14µA.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	49 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Halogen Free	Halogen-free according to IEC61249-2-21
Input Capacitance (Ciss) (Max) @ Vds	1900 pF @ 20 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	35 W
Rds On (Max) @ Id, Vgs	9.3mOhm @ 40A, 10V
Supplier Device Package	PG-TDSON-8-5
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2V @ 14µA