SI3456DDV-T1-GE3 The Vishay Dale SI3456DDV-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage rating. It is designed for surface mounting in a TSOP-6 package.
Mfr Part #:

SI3456DDV-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3456DDV-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage rating. It is designed for surface mounting in a TSOP-6 package.
✓ Total Stock: 10,458 pcs
$ Price Range: $0.99

SI3456DDV-T1-GE3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,020 pcs
7020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,900 pcs
1900 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,433 pcs
1433 pcs On Request 1 On Request On Request 1449+ On Request On Request
Non-Authorised Inventory information
105 pcs
105 pcs On Request 1 On Request On Request On Request On Request On Request

SI3456DDV-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3456DDV-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI3456DDV-T1-GE3 is a single N-Channel MOSFET featuring TrenchFET power MOSFET technology. It offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 6.3A at 25°C case temperature. The on-resistance (Rds On) is a maximum of 40mOhm at 5A and 10V gate-source voltage, and 50mOhm at 5A and 4.5V gate-source voltage.

 

This MOSFET is suitable for applications such as load switches, HDDs, and DC/DC converters. It operates within a temperature range of -55°C to 150°C (TJ) and is available in a compact TSOP-6 package, designed for surface mounting.

 

Key electrical characteristics include a gate charge (Qg) of 9 nC maximum at 10V and an input capacitance (Ciss) of 325 pF maximum at 15V. The device has a maximum power dissipation of 2.7W at 25°C case temperature and 1.7W at 25°C ambient temperature.

SI3456DDV-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI3456DDV-T1-GE3 N-Channel 30V MOSFET
Subcategory: N-Channel

SI3456DDV-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3456DDV-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3456DDV-T1-GE3 Features

  • N-Channel TrenchFET power MOSFET.
  • 30V drain-source breakdown voltage.
  • 6.3A continuous drain current.
  • Low on-resistance of 40mOhm max.
  • Surface mountable TSOP-6 package.

SI3456DDV-T1-GE3 Applications

  • Suitable for load switching.
  • Used in HDD applications.
  • Designed for DC/DC converters.

SI3456DDV-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 6.3A at 25°C case temperature.

What is the maximum on-resistance?

The maximum on-resistance is 40mOhm at 5A and 10V gate-source voltage.

What is the package type?

The package type is SOT-23-6 Thin / TSOT-23-6.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

Is this product RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

Home
Account

Categories