| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,400 pcs
|
6400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,220 pcs
|
4220 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Fall Time (Typ) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Rise Time (Typ) | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRLS3036TRL7PP is an N-Channel power MOSFET from Infineon's HEXFET family, designed for high-efficiency power switching applications. It features a drain-source breakdown voltage of 60V and a continuous drain current rating of 240A (package-limited) or 300A (silicon-limited).
The device offers an ultra-low maximum on-resistance of 1.9mOhm at Vgs=10V, with typical values of 1.5mOhm at 10V and 1.7mOhm at 4.5V, making it suitable for logic-level gate drive. Key electrical characteristics include a typical forward transconductance of 390S, input capacitance of 11270pF, and total gate charge of 160nC.
The MOSFET is housed in a surface-mount D2PAK (TO-263-7) package with 7 leads, supporting an operating junction temperature range of -55°C to +175°C and maximum power dissipation of 380W at Tc=25°C. Typical switching times include 81ns turn-on delay, 540ns rise time, 89ns turn-off delay, and 170ns fall time.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.34 | $5.34 |
| 10+ | $3.55 | $3.55 |
| 100+ | $2.53 | $2.53 |
| 500+ | $2.09 | $2.09 |
| 800+ | $2.09 | $2.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (Vdss) is 60V minimum.
The continuous drain current is 240A (package-limited at Tc=25°C) or 300A (silicon-limited at Tc=25°C).
Maximum on-resistance is 1.9mOhm at Vgs=10V, Id=180A. Typical values are 1.5mOhm at Vgs=10V and 1.7mOhm at Vgs=4.5V.
It is available in a surface-mount D2PAK (TO-263-7) package with 7 leads.
The operating junction temperature range is -55°C to +175°C.
The part is listed as RoHS3 Compliant and REACH Unaffected, though this compliance data is unverified.
The gate threshold voltage ranges from 1.0V minimum to 2.5V maximum at Id=250µA.