NVMFS6H858NT1G The NVMFS6H858NT1G is an N-Channel MOSFET from ON Semiconductor. It features an 80V drain-to-source voltage and a low on-resistance of 20.7mOhm.
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NVMFS6H858NT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NVMFS6H858NT1G is an N-Channel MOSFET from ON Semiconductor. It features an 80V drain-to-source voltage and a low on-resistance of 20.7mOhm.
✓ Total Stock: 10,500 pcs
$ Price Range: $0.99

NVMFS6H858NT1G Available from 1 distributor

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NVMFS6H858NT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS6H858NT1G Description

Short technical summary and product information.

The NVMFS6H858NT1G is an N-Channel MOSFET manufactured by ON Semiconductor. This power MOSFET is designed for efficient power management applications, offering a drain-to-source voltage (Vdss) of 80V and a maximum on-resistance (Rds On) of 20.7mOhm at 5A and 10V gate-source voltage.

 

Key electrical characteristics include a gate-to-source voltage range of ±20V and a gate charge (Qg) of 8.9nC at 10V. The device can handle continuous drain currents of up to 29A at case temperature and 8.4A at ambient temperature. Power dissipation is rated at 42W (Tc) and 3.5W (Ta).

 

This MOSFET operates within a wide temperature range of -55°C to 175°C. It is housed in a compact 5x6mm 5-DFN (8-SOFL) surface mount package, suitable for space-constrained designs. The device is AEC-Q101 qualified and RoHS compliant.

 

Applications for this MOSFET include power switching, motor control, and general-purpose power management where high efficiency and a small footprint are required.

NVMFS6H858NT1G Quick Information

Product Type: MOSFET
Canonical Name: NVMFS6H858NT1G N-Channel MOSFET
Subcategory: N-Channel

NVMFS6H858NT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFS6H858NT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS6H858NT1G Features

  • 80V drain-to-source voltage rating.
  • Low 20.7mOhm on-resistance.
  • High continuous drain current.
  • Compact 5x6mm surface mount package.
  • AEC-Q101 qualified and RoHS compliant.

NVMFS6H858NT1G Applications

  • Ideal for power switching circuits.
  • Suitable for motor control applications.
  • Used in efficient power management.
  • Designed for compact electronic devices.

NVMFS6H858NT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVMFS6H858NT1G?

The maximum drain-to-source voltage (Vdss) is 80 V.

What is the typical on-resistance of the NVMFS6H858NT1G MOSFET?

The maximum on-resistance (Rds On) is 20.7mOhm at 5A and 10V.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NVMFS6H858NT1G MOSFET supplied in?

It is supplied in a 5-DFN (5x6) (8-SOFL) surface mount package.

Is the NVMFS6H858NT1G RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NVMFS6H858NT1G?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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