IPC90N04S5L3R3ATMA1 N-Channel power MOSFET, 40V drain-source voltage, 90A continuous drain current, surface mount 8-PowerTDFN package.
Mfr Part #:

IPC90N04S5L3R3ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel power MOSFET, 40V drain-source voltage, 90A continuous drain current, surface mount 8-PowerTDFN package.
✓ Total Stock: 10,366 pcs
$ Price Range: $0.39 - $1.57

IPC90N04S5L3R3ATMA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
10,366 pcs
10366 pcs On Request 1 On Request On Request 19+20+21+ On Request On Request

IPC90N04S5L3R3ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPC90N04S5L3R3ATMA1 Description

Short technical summary and product information.

The IPC90N04S5L3R3ATMA1 is an N-channel enhancement mode power MOSFET from Infineon's OptiMOS 5 family. It is designed for automotive applications and is AEC Q101 qualified. Key specifications include a maximum drain-source voltage of 40V, continuous drain current of 90A at 25°C, and a low on-resistance of 3.3 mΩ (max) at VGS=10V. The device features logic level gate drive capability with a gate threshold voltage range of 1.2V to 2.0V.

 

This MOSFET offers fast switching performance with typical turn-on and turn-off delays of 3 ns and 15 ns respectively, and a total gate charge of 30 nC (typical). It is 100% avalanche tested and supports operating junction temperatures up to 175°C. The package is a surface mount 8-PowerTDFN (PG-TDSON-8-34) with MSL 1 moisture sensitivity level and RoHS compliance.

 

Typical applications include automotive motor control, DC-DC converters, battery protection, and high-current switching circuits. The device is also available in alternate packaging options for different supply chain needs.

IPC90N04S5L3R3ATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS 5
Canonical Name: Infineon IPC90N04S5L-3R3 N-Channel OptiMOS 5 Power MOSFET
Subcategory: N-Channel MOSFET

IPC90N04S5L3R3ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 - Unlimited
REACH Status: REACH Unaffected

IPC90N04S5L3R3ATMA1 Estimated Pricing

Qty Low High
1+ $1.57 $1.57
10+ $0.99 $0.99
100+ $0.66 $0.66
500+ $0.52 $0.52
1,000+ $0.43 $0.43
5,000+ $0.39 $0.39

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPC90N04S5L3R3ATMA1 Features

  • N-channel enhancement mode logic level.
  • AEC Q101 qualified for automotive.
  • Low on-resistance 3.3 mΩ at 10V.
  • High continuous drain current 90A.
  • 175°C operating temperature.

IPC90N04S5L3R3ATMA1 Applications

  • Automotive motor control and power management.
  • DC-DC converters and power supplies.
  • Battery protection circuits.
  • High-current switching applications.

IPC90N04S5L3R3ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is this device RoHS compliant?

Yes, the device is RoHS compliant and AEC Q101 qualified.

What is the package type?

The package is 8-PowerTDFN (PG-TDSON-8-34).

What is the maximum drain-source voltage?

The maximum drain-source voltage is 40V.

What is the continuous drain current at 25°C?

The continuous drain current is 90A at TC=25°C with VGS=10V.

What is the typical on-resistance?

The typical on-resistance is 2.6 mΩ at VGS=10V, ID=45A.

Is this MOSFET suitable for automotive applications?

Yes, it is AEC Q101 qualified for automotive applications.

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