SIRA00DP-T1-GE3 The Vishay Dale SIRA00DP-T1-GE3 is an N-Channel MOSFET designed for high power density applications. It features a 30V drain-source voltage and a continuous drain current of 100A.
Mfr Part #:

SIRA00DP-T1-GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIRA00DP-T1-GE3 is an N-Channel MOSFET designed for high power density applications. It features a 30V drain-source voltage and a continuous drain current of 100A.
✓ Total Stock: 10,532 pcs
$ Price Range: $0.99

SIRA00DP-T1-GE3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SIRA00DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIRA00DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIRA00DP-T1-GE3 is a TrenchFET Gen IV power MOSFET with an N-Channel configuration. It is rated for a 30V drain-source voltage and offers a low on-resistance of 1mΩ at 10V Vgs.

 

This MOSFET is designed for applications such as synchronous rectification, ORing, and high power density DC/DC converters, including VRMs and embedded DC/DC systems. It features a continuous drain current of 100A at 25°C case temperature and a maximum power dissipation of 104W at 25°C case temperature.

 

The component is housed in a PowerPAK SO-8 package, suitable for surface mounting. It operates within a junction temperature range of -55°C to +150°C. The device is 100% Rg and UIS tested, ensuring robust performance.

 

Key electrical characteristics include a gate charge of 66nC typical and an input capacitance of 11700pF maximum. The gate-source voltage range is +20V to -16V, with a gate threshold voltage of 2.2V at 250µA.

SIRA00DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay SIRA00DP-T1-GE3 N-Channel 30V PowerPAK SO-8 MOSFET
Subcategory: N-Channel

SIRA00DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIRA00DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIRA00DP-T1-GE3 Features

  • TrenchFET Gen IV power MOSFET technology.
  • 30V drain-source voltage rating.
  • 100A continuous drain current capability.
  • Low RDS(on) of 1mOhm at 10V Vgs.
  • PowerPAK SO-8 surface mount package.

SIRA00DP-T1-GE3 Applications

  • Ideal for DC-DC converter designs.
  • Used in high-current load switches.
  • Suitable for power management systems.
  • Applied in server and telecom power.
  • Designed for synchronous rectification.

SIRA00DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SIRA00DP-T1-GE3?

The maximum drain-to-source voltage (Vdss) is 30 V.

What package is the SIRA00DP-T1-GE3 available in?

It is offered in a PowerPAK SO-8 surface-mount package.

What is the operating temperature range?

The junction and storage temperature range is -55 °C to 150 °C.

What is the continuous drain current rating?

The continuous drain current is 100 A at case temperature 25 °C, reducing to 58 A at ambient temperature 25 °C.

What is the typical on-resistance at 10V gate drive?

The maximum on-resistance is 1 mΩ when VGS = 10 V and ID = 20 A.

What is the gate charge of this MOSFET?

The typical total gate charge is 66 nC at VGS = 10 V.

What is the input capacitance?

The maximum input capacitance (Ciss) is 11700 pF at VDS = 15 V.

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