IPD50P03P4L11ATMA1 Infineon IPD50P03P4L11ATMA1 is a P-Channel enhancement mode power MOSFET with 30V drain-source breakdown voltage and 50A continuous drain current. It features a low 10.5 mOhm maximum on-resistance at 10V gate drive.
Mfr Part #:

IPD50P03P4L11ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon IPD50P03P4L11ATMA1 is a P-Channel enhancement mode power MOSFET with 30V drain-source breakdown voltage and 50A continuous drain current. It features a low 10.5 mOhm maximum on-resistance at 10V gate drive.
✓ Total Stock: 10,600 pcs

IPD50P03P4L11ATMA1 Available from 1 distributor

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IPD50P03P4L11ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD50P03P4L11ATMA1 Description

Short technical summary and product information.

The Infineon IPD50P03P4L11ATMA1 is a P-Channel enhancement mode power MOSFET from the OptiMOS-P2 family, designed for automotive and industrial applications. It offers a drain-source breakdown voltage of -30V and a continuous drain current of -50A at 25°C case temperature, with a maximum pulsed drain current of -200A.

 

Key electrical characteristics include a low drain-source on-resistance of 10.5 mOhm maximum at Vgs = -10V and Id = -50A, and 18.0 mOhm maximum at Vgs = -4.5V and Id = -25A. The device features a gate threshold voltage range of -1.0V to -2.0V, making it suitable for logic-level drive. Input capacitance is 3770 pF maximum, and total gate charge is 55 nC maximum.

 

The MOSFET is housed in a PG-TO252-3-11 (DPAK) surface-mount package and is rated for an operating junction temperature range of -55°C to +175°C. It is RoHS compliant, MSL1 rated, and 100% avalanche tested. The device is intended for applications such as reverse battery protection.

IPD50P03P4L11ATMA1 Quick Information

Product Type: Power MOSFET
Series: OptiMOS-P2
Canonical Name: Infineon IPD50P03P4L-11 OptiMOS-P2 P-Channel Power MOSFET
Subcategory: Single MOSFET

IPD50P03P4L11ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL1 - Unlimited
REACH Status: REACH Unaffected

IPD50P03P4L11ATMA1 Features

  • P-Channel enhancement mode power MOSFET.
  • 30V drain-source breakdown voltage rating.
  • 50A continuous drain current capability.
  • 10.5 mOhm maximum on-resistance at 10V.
  • 175°C maximum operating junction temperature.

IPD50P03P4L11ATMA1 Applications

  • Reverse battery protection circuits.
  • Load switching in automotive systems.
  • DC/DC converter power stages.
  • Power management in industrial equipment.

IPD50P03P4L11ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IPD50P03P4L11ATMA1?

The drain-source breakdown voltage is -30V minimum at Id = -1mA.

What is the maximum continuous drain current?

The maximum continuous drain current is -50A at Tc = 25°C and -42A at Tc = 100°C with Vgs = -10V.

What is the on-resistance of this MOSFET?

The maximum drain-source on-resistance is 10.5 mOhm at Vgs = -10V, Id = -50A, and 18.0 mOhm at Vgs = -4.5V, Id = -25A.

What package is the IPD50P03P4L11ATMA1 available in?

It is available in a PG-TO252-3-11 (DPAK) surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to +175°C.

Is the IPD50P03P4L11ATMA1 RoHS compliant?

Yes, the device is RoHS compliant as per the datasheet.

What is the gate threshold voltage?

The gate threshold voltage ranges from -1.0V minimum to -2.0V maximum, with a typical value of -1.5V at Id = -85µA.

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