FDD6630A The FDD6630A is a 30V N-Channel PowerTrench MOSFET from On Semiconductor. It features a maximum drain current of 21A and a low on-resistance of 35mΩ at 10V gate drive.
Mfr Part #:

FDD6630A

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDD6630A is a 30V N-Channel PowerTrench MOSFET from On Semiconductor. It features a maximum drain current of 21A and a low on-resistance of 35mΩ at 10V gate drive.
✓ Total Stock: 10,500 pcs

FDD6630A Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
8,000 pcs
8000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request 0948+ On Request On Request

FDD6630A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Tape Width
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDD6630A Description

Short technical summary and product information.

The FDD6630A is a 30V N-Channel PowerTrench MOSFET designed by On Semiconductor for efficient power management in DC/DC converters and motor drive applications. It offers a continuous drain current of 21A and a maximum drain-source voltage of 30V.

 

Key electrical characteristics include a low on-resistance of 35mΩ (maximum) at Vgs=10V and Id=7.6A, and 50mΩ at Vgs=4.5V. The device features a typical gate charge of 5nC and an input capacitance of 462pF, enabling fast switching. It also has an avalanche energy rating of 55mJ and an avalanche current of 7.6A.

 

The MOSFET is housed in a surface-mount TO-252-3 (DPak) package with a supplier device package of TO-252AA. It operates over a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 28W at 25°C ambient.

FDD6630A Quick Information

Product Type: MOSFET
Series: PowerTrench
Canonical Name: FDD6630A 30V N-Channel PowerTrench MOSFET
Subcategory: Single MOSFET

FDD6630A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDD6630A Features

  • 30V drain-source voltage rating.
  • 21A continuous drain current.
  • 35mΩ on-resistance at 10V gate drive.
  • Low gate charge of 5nC typical.
  • Surface mount TO-252 package.

FDD6630A Applications

  • Used in DC/DC converter circuits.
  • Ideal for motor drive applications.
  • Suitable for power management systems.

FDD6630A FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDD6630A?

The maximum drain-source voltage (Vdss) is 30V.

What is the maximum continuous drain current of the FDD6630A?

The maximum continuous drain current is 21A at Ta=25°C.

What is the on-resistance of the FDD6630A?

The maximum on-resistance is 35mΩ at Vgs=10V and Id=7.6A, and 50mΩ at Vgs=4.5V and Id=6.3A.

What is the operating temperature range of the FDD6630A?

The operating junction temperature range is -55°C to 175°C.

What package is the FDD6630A available in?

The FDD6630A is available in a surface mount TO-252-3 (DPak) package, also known as SC-63, with a supplier device package of TO-252AA.

Is the FDD6630A RoHS compliant?

The FDD6630A is listed as RoHS3 compliant, but this status is unverified and should be treated as low confidence.

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