Mfr Part #:

FDMS4D0N12C

N-Channel MOSFET from On Semiconductor with 120V drain-source voltage, 114A continuous drain current, and low 4mΩ on-resistance. Surface mount in 8-PowerTDFN (PQFN8) package.

✓ Total Stock: 10,630 pcs

$ Price Range: $2.52 - $6.15

FDMS4D0N12C Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	8,500 pcs On Request	8500 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Flip Electronics ✓ Non-Authorised Inventory information	1,130 pcs On Request	1130 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Braun Electronic Components ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FDMS4D0N12C Description

Short technical summary and product information.

The FDMS4D0N12C is an N-Channel power MOSFET from On Semiconductor designed for high-efficiency power conversion. It features a maximum drain-source voltage of 120V and a continuous drain current of 114A at case temperature 25°C (18.5A at ambient). The device offers a low maximum on-resistance of 4 mΩ at VGS=10V and ID=67A, minimizing conduction losses. Gate charge is 82 nC and input capacitance is 6460 pF, enabling fast switching. The MOSFET is rated for pulsed drain current up to 628A and single-pulse avalanche energy of 222 mJ. It operates over a junction temperature range of -55°C to 150°C. The part is housed in a compact 8-PowerTDFN package (PQFN8 5x6 mm) for surface mount assembly. Thermal resistance is 1.18°C/W junction-to-case and 45°C/W junction-to-ambient. The device is RoHS3 compliant, halogen free, and lead-free. Typical applications include synchronous rectification, AC-DC and DC-DC power supplies, and load switches.

FDMS4D0N12C Quick Information

Product Type: MOSFET

Series: FDMS4D0N12C

Canonical Name: N-Channel MOSFET, 120V, 114A, PQFN8

Subcategory: N-Channel MOSFET

FDMS4D0N12C Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

FDMS4D0N12C Estimated Pricing

Qty	Low	High
1+	$6.15	$6.15
10+	$4.11	$4.11
100+	$2.96	$2.96
500+	$2.70	$2.70
1,000+	$2.60	$2.60
3,000+	$2.52	$2.52

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMS4D0N12C Features

N-Channel MOSFET with 120V drain-source voltage.
Low on-resistance of 4 mΩ at 10V gate drive.
High continuous drain current of 114A.
Surface mount in compact PQFN8 package.
RoHS compliant and halogen free.

FDMS4D0N12C Applications

Used in synchronous rectification circuits.
Ideal for AC-DC and DC-DC power supplies.
Suitable for load switch applications.

FDMS4D0N12C FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage?

120V.

What package is the FDMS4D0N12C available in?

8-PowerTDFN (PQFN8 5x6).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the FDMS4D0N12C RoHS compliant?

Yes, RoHS3 compliant and halogen free.

What is the continuous drain current?

114A at Tc=25°C, 18.5A at Ta=25°C.

What is the drain-source on-resistance?

4 mΩ max at VGS=10V, ID=67A; 8.8 mΩ max at VGS=6V, ID=33A.

What is the gate charge?

82 nC max at VGS=10V.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	18.5 A
Drain to Source Voltage (Vdss)	120 V
Drive Voltage (Max Rds On, Min Rds On)	6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	82 nC
Halogen Free	Yes
Input Capacitance (Ciss) (Max) @ Vds	6460 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	2.7 W
Rds On (Max) @ Id, Vgs	4 mΩ
Supplier Device Package	8-PQFN (5x6)
Tape & Reel	Tape & Reel
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	4 V