SQJ409EP-T1_GE3 The Vishay SQJ409EP-T1_GE3 is a P-Channel MOSFET with a 40V drain-source voltage and 60A continuous drain current. It is housed in a surface-mount PowerPAK SO-8 package.
Mfr Part #:

SQJ409EP-T1_GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay SQJ409EP-T1_GE3 is a P-Channel MOSFET with a 40V drain-source voltage and 60A continuous drain current. It is housed in a surface-mount PowerPAK SO-8 package.
✓ Total Stock: 10,600 pcs
$ Price Range: $2.56

SQJ409EP-T1_GE3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,020 pcs
7020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,580 pcs
2580 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

SQJ409EP-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQJ409EP-T1_GE3 Description

Short technical summary and product information.

The Vishay SQJ409EP-T1_GE3 is a P-Channel MOSFET designed for power applications. It features a maximum drain-source voltage (Vds) of 40V and a continuous drain current (Id) of 60A at 25°C case temperature.

 

This MOSFET offers low on-resistance, with Rds(on) as low as 0.0070 Ohms at Vgs = -10V and 10A. It operates over a wide temperature range from -55°C to 175°C.

 

The device is packaged in a PowerPAK SO-8 surface-mount package, suitable for various electronic designs. It is AEC-Q101 qualified and 100% R_g and UIS tested, indicating suitability for automotive applications.

 

Key electrical characteristics include a gate-source voltage (Vgs) of ±20V, input capacitance of 11000 pF, and gate charge of 260 nC. The maximum power dissipation is rated at 68W at 25°C case temperature.

SQJ409EP-T1_GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay SQJ409EP-T1_GE3 P-Channel 40V PowerPAK SO-8 MOSFET
Subcategory: P-Channel

SQJ409EP-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQJ409EP-T1_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJ409EP-T1_GE3 Features

  • P-Channel 40V Power MOSFET.
  • Low Rds On: 0.0070 Ohm at 10A, -10V.
  • High continuous drain current: 60A.
  • Wide operating temperature: -55°C to 175°C.
  • AEC-Q101 Qualified for automotive use.

SQJ409EP-T1_GE3 Applications

  • Suitable for automotive power systems.
  • Ideal for high-efficiency switching.
  • Used in power management circuits.
  • Applications requiring robust MOSFETs.

SQJ409EP-T1_GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of this MOSFET?

-40V (maximum).

What package type is this MOSFET available in?

PowerPAK SO-8, surface mount.

What is the operating temperature range?

-55°C to 175°C (junction).

What is the continuous drain current rating?

-60A at 25°C case temperature, -42A at 125°C.

What is the on-resistance of this MOSFET?

7.0mΩ at Vgs=-10V, 10.0mΩ at Vgs=-4.5V.

What is the gate charge?

260nC at Vgs=10V.

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